Result: The evolution of multi-level air gap integration towards 32 nm node interconnects
Title:
The evolution of multi-level air gap integration towards 32 nm node interconnects
Authors:
Source:
INFOS 2007: Proceedings of the 15th Biennial Conference on Insulating Films on Semiconductors, June 20-23, 2007, Glyfada Athens, GreeceMicroelectronic engineering. 84(9-10):2177-2183
Publisher Information:
Amsterdam: Elsevier Science, 2007.
Publication Year:
2007
Physical Description:
print, 16 ref
Original Material:
INIST-CNRS
Subject Terms:
Electronics, Electronique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Circuits intégrés, Integrated circuits, Conception. Technologies. Analyse fonctionnement. Essais, Design. Technologies. Operation analysis. Testing, Fabrication microélectronique (technologie des matériaux et des surfaces), Microelectronic fabrication (materials and surfaces technology), Capacité électrique, Capacitance, Capacitancia, Circuit intégré, Integrated circuit, Circuito integrado, Constante diélectrique, Permittivity, Constante dieléctrica, Diélectrique basse permittivité, Low k dielectric, Dieléctrico baja constante dieléctrica, Dépôt chimique phase vapeur, Chemical vapor deposition, Depósito químico fase vapor, Endommagement, Damaging, Deterioración, Entrefer, Air gap, Entrehierro, Fabrication microélectronique, Microelectronic fabrication, Fabricación microeléctrica, Fiabilité, Reliability, Fiabilidad, Interconnexion, Interconnection, Interconexión, Matériau poreux, Porous material, Material poroso, Système n niveaux, Multilevel system, Sistema n niveles, Temps retard, Delay time, Tiempo retardo, air gaps, decomposition, interconnect, low-k, non-conformal CVD, porosity, reliability, sacrificial materials
Document Type:
Conference
Conference Paper
File Description:
text
Language:
English
Author Affiliations:
NXP Semiconductors -Research, Kapeldreef 75, 3001, Leuven, Belgium
ISSN:
0167-9317
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Accession Number:
edscal.18853537
Database:
PASCAL Archive
Further Information
Advanced copper interconnects need porous low-k materials to obtain low interline capacitances. A number of porous low-k integration issues have however delayed the introduction of these fragile dielectrics. Replacing the porous low-k dielectric by air is a viable alternative for future technology nodes. Air gaps are not only less prone to integration issues such as plasma damage, but they also enable extremely low capacitances since the permittivity of air is close to 1. In this paper, the evolution of the main air gap integration techniques, from micron-sized aluminum interconnect to copper interconnect for the 32 nm node are discussed in terms of integration complexity, reliability and manufacturability.