Treffer: Wideband VCO with simultaneous switching of frequency band, active core, and varactor size

Title:
Wideband VCO with simultaneous switching of frequency band, active core, and varactor size
Authors:
HAUSPIE, Dries, PARK, Eun-Chul, CRANINCKX, Jan
Source:
ESSCIRC 2006IEEE journal of solid-state circuits. 42(7):1472-1480
Publisher Information:
New York, NY: Institute of Electrical and Electronics Engineers, 2007.
Publication Year:
2007
Physical Description:
print, 20 ref
Original Material:
INIST-CNRS
Subject Terms:
Electronics, Electronique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Diodes, Transistors, Circuits intégrés, Integrated circuits, Conception. Technologies. Analyse fonctionnement. Essais, Design. Technologies. Operation analysis. Testing, Circuits électriques, optiques et optoélectroniques, Electric, optical and optoelectronic circuits, Propriétés des circuits, Circuit properties, Circuits électroniques, Electronic circuits, Oscillateurs, résonateurs, synthétiseurs, Oscillators, resonators, synthetizers, Bande fréquence, Frequency band, Banda frecuencia, Bruit phase, Phase noise, Ruido fase, Commutation, Switching, Conmutación, Conception conjointe, Codesign, Diseño conjunto, Consommation énergie électrique, Power consumption, Diode varactor, Varactor diode, Diodo varactor, Gain, Ganancia, Implémentation, Implementation, Implementación, Oscillateur commande tension, Voltage controlled oscillator, Oscilador comando tensión, Résistance négative, Negative resistance, Resistencia negativa, Technologie MOS complémentaire, Complementary MOS technology, Tecnología MOS complementario, Transistor, tuning range, voltage-controlled oscillator
Document Type:
Konferenz Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Melexis, Tessenderlo, Belgium
Samsung Advanced Institute of Technology, Yongin 44-712, Korea, Republic of
IMEC, Wireless Research, 3001 Leuven, Belgium
ISSN:
0018-9200
Access URL:
http://pascal-francis.inist.fr/vibad/index.php?action=search&terms=18943681
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Accession Number:
edscal.18943681
Database:
PASCAL Archive

Weitere Informationen

As the tuning range of integrated LC-VCOs increases, it becomes difficult to co-design the active negative resistance core and the varactor size optimally for the complete frequency range. The presented VCO design solves this by adjusting the size of the negative resistance transistors with a switched active core, with the additional benefit that this reduces parasitics and hence allows to achieve better phase noise and an even higher tuning range. Also the VCO gain variations are counteracted by employing an analog varactor that can change in size. The implementation in 0.13-μm CMOS shows a tuning range from 3.1 to 5.2 GHz, with a power consumption varying accordingly from 7.7 to 2.1 mA from a 1.2 V supply. The measured phase noise is -118 dBc/Hz at 1 MHz from a 4-GHz carrier.