Result: Iron-aluminium pair reconfiguration processes in SiGe alloys

Title:
Iron-aluminium pair reconfiguration processes in SiGe alloys
Authors:
KRUSZEWSKI, P, MESLI, A, DOBACZEWSKI, L, ABROSIMOV, N. V, MARKEVICH, V. P, PEAKER, A. R
Source:
Papers presented at the second international workshop: Coordination action on defects relevant to engineering silicon-based devices (Crete, September 2006)Journal of materials science. Materials in electronics. 18(7):759-762
Publisher Information:
Norwell, MA: Springer, 2007.
Publication Year:
2007
Physical Description:
print, 12 ref
Original Material:
INIST-CNRS
Subject Terms:
Electronics, Electronique, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Circuits intégrés, Integrated circuits, Conception. Technologies. Analyse fonctionnement. Essais, Design. Technologies. Operation analysis. Testing, Alliage Ge Si, Ge-Si alloys, Alliage binaire, Binary alloy, Aleación binaria, Alliage semiconducteur, Semiconductor alloys, Alliage(action), Alloying, Aleación(acción), Aluminium, Aluminio, Architecture reconfigurable, Reconfigurable architectures, Fer alliage, Iron alloy, Hierro aleación, Germanium, Germanio, Gestion température packaging électronique, Thermal management (packaging), Haute résolution, High resolution, Alta resolucion, Interstitiel, Interstitial, Intersticial, Matériau dopé, Doped materials, Plus proche voisin, Nearest neighbour, Vecino más cercano, Processus saut, Jump process, Proceso salto, Silicium, Silicon, Silicio, Spectrométrie transitoire niveau profond, Deep level transient spectrometry, Espectrometría transitoria nivel profundo, Système refroidissement, Cooling system, Sistema enfriamiento, Al, Fe, Ge Si, Si1-xGex, Si, SiGe
Document Type:
Conference Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Institute of Physics Polish Academy of Science, al. Lotnikow 32/46, Warsaw 02-668, Poland
Laboratoire PHASE, CNRS, Strasbourg, France
Institute of Crystal Growth, Berlin, Germany
Centre for Electronic Materials Devices and Nanostructures, The University of Manchester, Manchester, United Kingdom
ISSN:
0957-4522
Access URL:
http://pascal-francis.inist.fr/vibad/index.php?action=search&terms=18965027
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Accession Number:
edscal.18965027
Database:
PASCAL Archive

Further Information

For the iron-aluminium pair in silicon it is possible to observe a deeper and stable first-nearest neighbour configuration and a shallower metastable more distant pair. Depending on sample cooling conditions it is possible to convert some of the stable pairs to metastable ones in a fully reversible process. The conversion process is a single jump of the iron between two neighbouring interstitial sites. In this study we have analysed how the electronic levels of the pair in both configurations are modified in SiGe by the alloying effects. We have also investigated to what extent the presence of germanium atoms in the crystal matrix affects the dynamics of the single iron jump process. These studies have been performed using Czochralski-grown unstrained aluminium-doped Si1-xGex crystals (0 < x < 0.056). Local environments of the FeiAls pairs have been observed as structures seen in high-resolution Laplace DLTS spectra. It has been observed that the energy separation of the main and subsidiary peaks are similar for both pair configurations which indicates that for iron the alloy effect is similar for both its interstitial positions.