• YBa2Cu3O7 coated conductor gro...

Treffer: YBa2Cu3O7 coated conductor grown by hybrid liquid phase epitaxy

Title:
YBa2Cu3O7 coated conductor grown by hybrid liquid phase epitaxy
Authors:
MACMANUS-DRISCOLL, J. L, KURSUMOVIC, A, MAIOROV, B, CIVALE, L, JIA, Q. X, FOLTYN, S. R, WANG, H
Source:
The 2006 applied superconductivity conference, Seattle, WA, August 27-September 1, 2006. Part III of three partsIEEE transactions on applied superconductivity. 17(2):2537-2541
Publisher Information:
New York, NY: Institute of Electrical and Electronics Engineers, 2007.
Publication Year:
2007
Physical Description:
print, 16 ref 3
Original Material:
INIST-CNRS
Subject Terms:
Electronics, Electronique, Electrical engineering, Electrotechnique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Fabrication microélectronique (technologie des matériaux et des surfaces), Microelectronic fabrication (materials and surfaces technology), Electrotechnique. Electroenergetique, Electrical engineering. Electrical power engineering, Matériel électrique divers, Various equipment and components, Eléments de connexion. Câblage. Filerie, Electric connection. Cables. Wiring, Ancrage flux, Flux pinning, Anclaje flujo, Conducteur électrique, Electrical conductor, Conductor eléctrico, Couche mince, Thin film, Capa fina, Couche tampon, Buffer layer, Capa tampón, Couche épaisse, Thick film, Capa espesa, Courant critique, Critical current, Corriente crítica, Densité courant critique, Critical current density, Densidad corriente crítica, Diminution coût, Cost lowering, Reducción costes, Dépôt bombardement ionique, Ion beam coating, Revestimiento bombardeo iónico, Dépôt laser pulsé, Pulsed laser deposition, Dépôt physique phase vapeur, Physical vapor deposition, Deposición física fase vapor, Epaisseur, Thickness, Espesor, Epitaxie phase liquide, LPE, Fabrication microélectronique, Microelectronic fabrication, Fabricación microeléctrica, Matériau cristallin, Crystalline material, Material cristalino, Matériau revêtu, Coated material, Material revestido, Microscopie électronique transmission, Transmission electron microscopy, Microscopía electrónica transmisión, Microstructure, Microestructura, Méthode IBAD, Ion beam assisted deposition method, Método IBAD, Procédé fabrication, Manufacturing process, Procedimiento fabricación, Supraconducteur haute température, High temperature superconductor, Supraconductor alta temperatura, Taux croissance, Growth rate, Tasa crecimiento, Température critique, Critical temperature, Temperatura crítica, Coated conductors, HLPE, YBCO growth rate, hybrid liquid phase epitaxy, thick YBCO films
Document Type:
Konferenz Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB2 3QZ, United Kingdom
Superconductivity Technology Center, Los Alamos National Laboratory, Los Alamos, NM 87545, United States
Department of Electrical and Computer Engineering, Texas A&M University, College Station, TX 77843, United States
ISSN:
1051-8223
Access URL:
http://pascal-francis.inist.fr/vibad/index.php?action=search&terms=19016817
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electrical engineering. Electroenergetics

Electronics
Accession Number:
edscal.19016817
Database:
PASCAL Archive

Weitere Informationen

The Hybrid Liquid Phase epitaxy (HLPE) approach has the potential to be a high rate-low cost process. This deposition process is used to grow epitaxial YBa2 Cu3 Or (YBCO) films in the presence of a thin (100 to 500 nm) liquid BaO-CuO flux layer. Despite the presence of the molten flux, YBCO growth is found to be feasible on technical substrates because of the limited dissolution of the buffer'layer in the thin flux layer. The high atom mobility at the growing interface under the liquid flux enables high growth rates (demonstrated to be greater than 10 nm s-1 in a wide temperature regime and predicted to be up to ∼ 50 nm.s-1). We report results on HLPE YBCO films grown on (100) strontium titanate and textured technical substrates such as rolling-assisted biaxially textured substrates (RABiTS) and ion-beam-assisted-deposited (IBAD) MgO. High values of the critical temperature above 90 K and critical current ∼400 A per cm width for 3 μm thick films on single crystal substrates and promising high values on technical substrates are obtained. Furthermore, there is potential for making thicker films of the same quality since film density is maintained with thickness. Angular-dependent transport critical current as a function of applied field for these films, as well as microstructural measurements by transmission electron microscopy are also reported. The angular and field dependence of critical current density are similar to standard PLD (pulsed laser deposition) films. Although the films are of high epitaxial quality they contain yttria precipitates which are possible sources of flux pinning centers.