• Surface morphology and microst...

Result: Surface morphology and microstructure of thick YBa2Cu3O7-δ films on vicinal r-Cut sapphire buffered with CeO2

Title:
Surface morphology and microstructure of thick YBa2Cu3O7-δ films on vicinal r-Cut sapphire buffered with CeO2
Authors:
JIA CAI NIE, YAMASAKI, Hirofumi, DEVELOS-BAGARINAO, Katherine, NAKAGAWA, Yoshihiko
Source:
The 2006 applied superconductivity conference, Seattle, WA, August 27-September 1, 2006. Part III of three partsIEEE transactions on applied superconductivity. 17(2):3459-3462
Publisher Information:
New York, NY: Institute of Electrical and Electronics Engineers, 2007.
Publication Year:
2007
Physical Description:
print, 18 ref 3
Original Material:
INIST-CNRS
Subject Terms:
Electronics, Electronique, Electrical engineering, Electrotechnique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Circuits intégrés, Integrated circuits, Conception. Technologies. Analyse fonctionnement. Essais, Design. Technologies. Operation analysis. Testing, Fabrication microélectronique (technologie des matériaux et des surfaces), Microelectronic fabrication (materials and surfaces technology), Circuit intégré, Integrated circuit, Circuito integrado, Couche tampon, Buffer layer, Capa tampón, Couche épaisse, Thick film, Capa espesa, Densité courant critique, Critical current density, Densidad corriente crítica, Densité élevée, High density, Densidad elevada, Défaut empilement, Stacking fault, Defecto apilado, Dépôt laser pulsé, Pulsed laser deposition, Fabrication microélectronique, Microelectronic fabrication, Fabricación microeléctrica, Grande profondeur, Great depth, Gran profundidad, Interconnexion, Interconnection, Interconexión, Matériau poreux, Porous material, Material poroso, Microfissure, Microcrack, Microfisura, Microscopie électronique transmission, Transmission electron microscopy, Microscopía electrónica transmisión, Microstructure, Microestructura, Réaction interface, Interface reaction, Reacción interfase, Structure surface, Surface structure, Estructura superficie, Supraconducteur haute température, High temperature superconductor, Supraconductor alta temperatura, microcrack-free, thick YBCO film, vicinal r-cut sapphire
Document Type:
Conference Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Department of Physics, Beijing Normal University, Beijing 100875, China
Energy Technology Research Institute, National Institute of Advanced In dustrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan
ISSN:
1051-8223
Access URL:
http://pascal-francis.inist.fr/vibad/index.php?action=search&terms=19017049
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Accession Number:
edscal.19017049
Database:
PASCAL Archive

Further Information

Microcrack-free thick YBa2Cu3O7-δ (YBCO) films were successfully fabricated by pulsed laser deposition on deliberately miscut Al2O3 (1102) (5.22° off towards [1120]) buffered with CeO2. Characterization of the films revealed a porous morphology, consisting of interconnected islands and deep holes (pores). The microstructure of the YBCO films was further investigated by cross-section (cut along both Al2O3[1101] and [1120]) transmission electron microscopy (TEM). No apparent interface reaction is seen for all the TEM observations. A high density of linear defects aligned near c-axis are frequently observed. All the defects are initiated from the YBCO/CeO2 interface, indicating the importance of the microstructure of the CeO2 buffer layer and the sapphire substrate for the growth of YBCO. In addition, numerous small stacking faults lying in the a - b-plane of YBCO were produced by the linear defects. The high density of the growth-induced defects may act as strong pinning centers in YBCO films and therefore increase Jc of the film.