Result: Study of the surface morphology of Nb films and the microstructure of Nb/AlOx-Al/Nb trilayers
University of Sydney, NSW 2006, Australia
Cavendish Laboratory, University of Cambridge, United Kingdom
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Further Information
To optimize the current-voltage characteristics of Nb/AlOx-Al/Nb Josephson tunnel junctions, a uniform and well defined insulating barrier (AlOx) is required so that no leakage current occurs between the upper and lower Nb electrodes. We investigated the dependence of the surface morphology of de magnetron-sputtered Nb thin films on deposition parameters using atomic force microscopy (AFM), the cross-sectional microstructure of the Nb/AlOx-Al/Nb trilayers using transmission electron microscopy (TEM), and anodization profiling. The surface roughness of the base Nb layer was found to affect the AlOx-Al layer and thus the quality of Nb/AlOx-Al/Nb trilayer. Diffusion of Al at the Al/Nb interface increases with increasing roughness of the base Nb layer, which increases the minimum Al thickness required to cover base-Nb. The importance of sufficient sample-cooling during the trilayer deposition was also confirmed by the TEM study and anodization profiling.