• YBa2Cu3O7-δ formation by proce...

Result: YBa2Cu3O7-δ formation by processing of laser-ablated, fluorine-free precursor films

Title:
YBa2Cu3O7-δ formation by processing of laser-ablated, fluorine-free precursor films
Authors:
KIM, K, ZHANG, Y, FEENSTRA, R, CHRISTEN, D. K, CHRISTEN, H. M, COOK, S, LIST, F. A, TAO, J, PENNYCOOK, S. J, ZUEV, Y
Source:
The 2006 applied superconductivity conference, Seattle, WA, August 27-September 1, 2006. Part III of three partsIEEE transactions on applied superconductivity. 17(2):3624-3627
Publisher Information:
New York, NY: Institute of Electrical and Electronics Engineers, 2007.
Publication Year:
2007
Physical Description:
print, 11 ref 3
Original Material:
INIST-CNRS
Subject Terms:
Electronics, Electronique, Electrical engineering, Electrotechnique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Fabrication microélectronique (technologie des matériaux et des surfaces), Microelectronic fabrication (materials and surfaces technology), Ancrage flux, Flux pinning, Anclaje flujo, Basse pression, Low pressure, Baja presión, Chauffage, Heating, Calefacción, Densité courant critique, Critical current density, Densidad corriente crítica, Diffraction RX, X ray diffraction, Difracción RX, Dépôt laser pulsé, Pulsed laser deposition, Epitaxie, Epitaxy, Epitaxia, Fabrication microélectronique, Microelectronic fabrication, Fabricación microeléctrica, Formation dépôt, Deposit formation, Formación depósito, Hystérésis magnétique, Magnetic hysteresis, Histérisis magnética, Matériau cristallin, Crystalline material, Material cristalino, Méthode ablation laser, Laser ablation technique, Pression oxygène, Oxygen pressure, Presión oxígeno, Supraconducteur haute température, High temperature superconductor, Supraconductor alta temperatura, Taux croissance, Growth rate, Tasa crecimiento, Temps traitement, Processing time, Tiempo proceso, Température ambiante, Room temperature, Temperatura ambiente, Fluorine free process, YBCO processing, high temperature superconductors (HTS), precursor films, pulsed laser deposition (PLD)
Document Type:
Conference Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Superconductive and Energy Efficient Materials Group in Materials Science and Technology Division of Oak Ridge National Lab, Oak Ridge, TN 37831, United States
Functional Heterostructures Group in Materials Science and Technology Division of Oak Ridge National Lab, Oak Ridge, TN 37831, United States
Electron Microscopy Group in Materials Science and Technology Division of Oak Ridge National Lab, Oak Ridge, TN 37831, United States
ISSN:
1051-8223
Access URL:
http://pascal-francis.inist.fr/vibad/index.php?action=search&terms=19017090
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Accession Number:
edscal.19017090
Database:
PASCAL Archive

Further Information

Epitaxial YBa2Cu3Ο7-δ(YBCO) was formed by processing of laser-ablated, fluorine-free precursor films. The depositions were conducted at room temperature in low oxygen pressure on LaAlΟ3 (LAO) single crystal substrates. Processing was done in the same deposition chamber by heating the precursor film to reaction temperatures of 750-850° C in a reducing gas ambient, and then raising the oxygen pressure to the conversion point. Typical processing times are a few minutes, corresponding to minimum YBCO growth rates of 1 nm/s. XRD analysis shows epitaxial growth and high crystallinity, although measured Tc values are somewhat suppressed at 88 K, with resulting critical current density, Jc of about 1 MA/cm2 at 77 K, as determined by magnetic hysteresis. Properties indicate that the materials lack appropriate level of defects needed both for rapid oxygenation and flux pinning.