Result: Thermal evolution of small N-D complexes in deuterated dilute nitrides revealed by in-situ high resolution X-ray diffraction

Title:
Thermal evolution of small N-D complexes in deuterated dilute nitrides revealed by in-situ high resolution X-ray diffraction
Authors:
BISOGNIN, G, DE SALVADOR, D, RUBINI, S, MARTELLI, F, FRANCIOSI, A, NAPOLITANI, E, BERTI, M, POLIMENI, A, FELICI, M, CAPIZZI, M, BAIS, G, JABEEN, F, PICCIN, M
Source:
8th Biennial Conference on High Resolution X-ray Diffraction and imaging (XTOP 2006), Karlsruhe/Baden-Baden, Germany, 19-22 September 2006Physica status solidi. A, Applications and materials science (Print). 204(8):2766-2771
Publisher Information:
Berlin: Wiley-VCH, 2007.
Publication Year:
2007
Physical Description:
print, 9 ref
Original Material:
INIST-CNRS
Subject Terms:
Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Nanotechnologies, nanostructures, nanoobjects, Nanotechnologies, nanostructures, nanoobjets, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Structure des liquides et des solides; cristallographie, Structure of solids and liquids; crystallography, Diffraction et diffusion de rayons x, X-ray diffraction and scattering, Diffraction sur monocristal et sur poudre, Single-crystal and powder diffraction, Défauts et impuretés dans les cristaux; microstructure, Defects and impurities in crystals; microstructure, Dopage et implantation d'impuretés dans les composés iii-v et ii-vi, Doping and impurity implantation in iii-v and ii-vi semiconductors, Addition azote, Nitrogen additions, Addition deutérium, Deuterium additions, Amas impureté, Impurity cluster, Montón impureza, Contrainte traction, Tensile stress, Tensión traccíon, Diagramme rotation, Rocking curve, Diagrama rotación, Diffraction RX, XRD, Effet rayonnement, Radiation effects, Etat impureté, Impurity states, Gallium arséniure, Gallium arsenides, Paramètre cristallin, Lattice parameters, Passivation, Recuit thermique, Thermal annealing, Recocido térmico, 6110N, 6172V, 6865H
Document Type:
Conference Conference Paper
File Description:
text
Language:
English
Author Affiliations:
MATIS INFM-CNR and Physic Department G. Galilei, Università di Padova, Via Marzolo 8, 35131 Padova, Italy
CNISM, Università di Padova, Via Marzolo 8, 35131 Padova, Italy
CNISM and Physic Department, Università di Roma La Sapienza, P.le A. Moro 2, 00185 Roma, Italy
Laboratorio Nazionale TASC-INFM-CNR, Area Science Park, S.S. 14, Km. 163.5, 34012 Trieste, Italy
Center of Excellence for Nanostructured Materials, University of Trieste, 34127 Trieste, Italy
ISSN:
1862-6300
Access URL:
http://pascal-francis.inist.fr/vibad/index.php?action=search&terms=19018873
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Physics of condensed state: structure, mechanical and thermal properties
Accession Number:
edscal.19018873
Database:
PASCAL Archive

Further Information

In this article we studied the thermal evolution of nitrogen-deuterium (N-D) complexes which form in dilute nitride GaAs1-xNx alloys as a consequence of D irradiation. These complexes are particularly important and interesting because they lead to the electronic passivation of N and also because their formation is accompanied by a strain reversal (from tensile to compressive) of the as-grown material. By collecting in-situ high resolution X-ray diffraction rocking-curves during thermal annealing, we were able to monitor in real time the evolution of the lattice parameter (a) of the samples, demonstrating that two processes are involved in the dissolution of N-D clusters. During the first process a evolves from values larger than that of the GaAs substrate saturating at values very close to the GaAs one, while the second process, that starts at a higher temperature, leads to an almost complete recovery of the D-free GaAs1-xJQx lattice parameter. By analizing the thermal evolution of a, we were able to extract information about the energetics of the two N-D complexes dissolution steps.