Result: Structural property of β-FeSi2 layers deposited on FeSi from a molten salt
Title:
Structural property of β-FeSi2 layers deposited on FeSi from a molten salt
Authors:
Source:
Asia-Pacific Conference on Semiconducting Silicides Science and Technology Towards Sustainable Optoelectronics (APAC-SILICIDE 2006), July 29-31, 2006, KyotoThin solid films. 515(22):8201-8204
Publisher Information:
Lausanne: Elsevier Science, 2007.
Publication Year:
2007
Physical Description:
print, 14 ref
Original Material:
INIST-CNRS
Subject Terms:
Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Metallurgy, welding, Métallurgie, soudage, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Structure des liquides et des solides; cristallographie, Structure of solids and liquids; crystallography, Défauts et impuretés dans les cristaux; microstructure, Defects and impurities in crystals; microstructure, Défauts d'empilement et autres défauts plans ou étendus, Stacking faults and other planar or extended defects, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Structure et morphologie de couches minces, Thin film structure and morphology, Structure et morphologie; épaisseur, Structure and morphology; thickness, Défauts et impuretés: dopage, implantation, distribution, concentration, etc, Defects and impurities: doping, implantation, distribution, concentration, etc, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie, Methods of deposition of films and coatings; film growth and epitaxy, Théorie et modèles de la croissance de films, Theory and models of film growth, Couche mince, Thin films, Couche épaisse, Thick films, Densité élevée, High density, Densidad elevada, Direction cristallographique, Crystallographic direction, Dirección cristalográfica, Défaut empilement, Stacking faults, Fer siliciure, Iron silicides, Microscopie électronique transmission, Transmission electron microscopy, Microstructure, Mécanisme croissance, Growth mechanism, Mecanismo crecimiento, Mécanisme formation, Formation mechanism, Mecanismo formacion, Orientation cristalline, Crystal orientation, Relation orientation, Orientation relation, Relación orientación, Sel fondu, Molten salts, Semiconducteur, Semiconductor materials, Siliciure, Silicides, Structure cristalline, Crystal structure, Traitement thermique, Heat treatments, 6172N, 6855A, 6855J, 6855L, FeSi2, Substrat FeSi, Semiconductors, Structural properties, Transmission electron microscopy (TEM)
Document Type:
Conference
Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Faculty of Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8561, Japan
Department of Material Science and Engineering, School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
Pulstec Industrial Co., Ltd., 7000-35 Techno-Land, Hosoe, Inasa, Shizuoka, 431-1304, Japan
Department of Material Science and Engineering, School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
Pulstec Industrial Co., Ltd., 7000-35 Techno-Land, Hosoe, Inasa, Shizuoka, 431-1304, Japan
ISSN:
0040-6090
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Physics and materials science
Physics of condensed state: structure, mechanical and thermal properties
Physics of condensed state: structure, mechanical and thermal properties
Accession Number:
edscal.19029431
Database:
PASCAL Archive
Further Information
The microstructural properties of the β-FeS12/Fesi structure prepared from a molten salt have been characterized using transmission electron microscopy (TEM). The β-FeSi2 films were grown on FeSi substrates at the heat treatment temperature of 900 °C from 1 min to 24 h using the molten salt technique. It is found that the films consisted of a thin surface layer and a thick underlying layer with columnar-shaped domains. The crystallographic directions of the domains are mostly randomly oriented. The β-FeSi2 domains in the film, however, have specific crystallographic orientation relationships with the adjoining domains and the FeSi substrate. A high density of the stacking faults on the β-FeSi2(100) planes was also observed through the films. Moreover, the growth evolution of the β-FeSi2 domains, the defect characteristics and the formation mechanism of the defects are discussed.