Result: (Zn, Mg)O/ZnO-based heterostructures grown by molecular beam epitaxy on sapphire : Polar vs. non-polar

Title:
(Zn, Mg)O/ZnO-based heterostructures grown by molecular beam epitaxy on sapphire : Polar vs. non-polar
Source:
Workshop of Recent Advances on Low Dimensional Structures and Devices (WRA-LDSD)Microelectronics journal. 40(3):512-516
Publisher Information:
Kidlington: Elsevier, 2009.
Publication Year:
2009
Physical Description:
print, 29 ref
Original Material:
INIST-CNRS
Subject Terms:
Electronics, Electronique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure electronique, proprietes electriques, magnetiques et optiques, Condensed matter: electronic structure, electrical, magnetic, and optical properties, Propriétés optiques, spectroscopie et autres interactions de la matière condensée avec les particules et le rayonnement, Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation, Photoluminescence, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Nanomatériaux et nanostructures : fabrication et caractèrisation, Nanoscale materials and structures: fabrication and characterization, Puits quantiques, Quantum wells, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Dispositifs à structure composée, Compound structure devices, Metaux. Metallurgie, Metals. Metallurgy, Transformation de matériaux métalliques, Production techniques, Traitements thermiques, Heat treatment, Trempe et revenu, Hardening. Tempering, Champ interne, Internal field, Campo interno, Confinement, Confinamiento, Effet Stark confinement quantique, Quantum confined Stark effect, Energie activation, Activation energy, Energía activación, Aktivierungsenergie, Epitaxie jet moléculaire, Molecular beam epitaxy, Etude comparative, Comparative study, Estudio comparativo, Vergleich, Exciton, Excitón, Fabrication microélectronique, Microelectronic fabrication, Fabricación microeléctrica, Hétérostructure, Heterostructures, Optimisation, Optimization, Optimización, Optimierung, Oxyde d'aluminium, Aluminium oxide, Aluminio óxido, Aluminiumoxid, Oxyde de zinc, Zinc oxide, Zinc óxido, Zinkoxid, Photoluminescence, Fotoluminiscencia, Propriété physique, Physical properties, Propiedad física, Physikalische Eigenschaft, Puits quantique, Quantum well, Pozo cuántico, Rayonnement UV, Ultraviolet radiation, Radiación ultravioleta, Ultraviolettstrahlen, Trempe, Quenching, Temple, Abschrecken, Zinc, Zink, 8107S, 8540H, Al2O3, Mg, Zn, ZnO, Non-polar, Quantum wells
Time:
7135, 7867
Document Type:
Conference Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Centre de Recherche sur l'HétéroEpitaxie et ses Applications (CRHEA-CNRS), Rue Bernard Gregory, 06560 Valbonne, Sophia Antipolis, France
Physics Department, University of Nice Sophia Antipolis, Parc Valrose, 06103 Nice, France
ISSN:
0959-8324
Rights:
Copyright 2009 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics

Metals. Metallurgy

Physics and materials science

Physics of condensed state: electronic structure, electrical, magnetic and optical properties
Accession Number:
edscal.21331801
Database:
PASCAL Archive

Further Information

Zinc oxide (ZnO) has recently attracted considerable attention because of its unique physical properties and its potential applications in the blue and UV spectral range. Up to now, ZnO-based heterostructures have mostly been grown in a c-orientation. The growth of non-polar layers along the a-direction [1120] has been proposed to avoid any built-in electric fields in the c-direction. Polar and non-polar quantum wells (QWs) embedded in (Zn, Mg)O barriers were grown on an optimized buffer. We compare the photoluminescence (PL) emission of a- and c-oriented QWs. From this comparison, we demonstrate that the QWs exhibit confinement but no indication of quantum confined Stark effect, contrary to what is observed in c-oriented structures. In the non-polar orientation, it is shown that the thermal quenching is not related to the thermal escape of excitons from the ZnO area, since the calculated activation energies are much lower.