Result: 1 V and 10 V SNS Programmable Voltage Standards for 70 GHz

Title:
1 V and 10 V SNS Programmable Voltage Standards for 70 GHz
Authors:
MUELLER, F, BEHR, R, WEIMANN, T, PALAFOX, L, OLAYA, D, DRESSELHAUS, P. D, BENZ, S. P
Source:
The Applied Superconductivity Conference 2008 (ASC 2008), Chicago, IL, August 17-22, 2008. Part I of Three PartsIEEE transactions on applied superconductivity. 19(3):981-986
Publisher Information:
New York, NY: Institute of Electrical and Electronics Engineers, 2009.
Publication Year:
2009
Physical Description:
print, 24 ref 1
Original Material:
INIST-CNRS
Subject Terms:
Electronics, Electronique, Electrical engineering, Electrotechnique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Appareillage électronique et fabrication. Composants passifs, circuits imprimés, connectique, Electronic equipment and fabrication. Passive components, printed wiring boards, connectics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Dispositifs supraconducteurs, Superconducting devices, Electrotechnique. Electroenergetique, Electrical engineering. Electrical power engineering, Matériel électrique divers, Various equipment and components, Electroaimants, Electromagnets, Electronique de puissance, alimentations électriques, Power electronics, power supplies, Alliage amorphe, Amorphous alloy, Aleación amorfa, Basse fréquence, Low frequency, Baja frecuencia, Courant continu, Direct current, Corriente contínua, Electronique puissance, Power electronics, Electrónica potencia, Fabrication microélectronique, Microelectronic fabrication, Fabricación microeléctrica, Jonction Josephson, Josephson junction, Unión Josephson, Méthode mesure, Measurement method, Método medida, Pulvérisation irradiation, Sputtering, Pulverización irradiación, Revêtement pulvérisation, Sputter coating, Revestimiento pulverización, Référence tension, Voltage standard, Estandar voltaje, Source courant, Current source, Fuente corriente, Système mesure, Measuring system, Sistema medida, Tension sortie, Output voltage, Voltage salida, Transition métal isolant, Metal insulator transition, Transición metal aislante, AC Josephson voltage standard, Josephson arrays, SINIS junction, SNS junction, programmable Josephson voltage standard
Document Type:
Conference Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Physikalisch-Technische Bundesanstalt (PTB), 38116 Braunschweig, Germany
National Institute of Standard and Technology (NIST), Boulder, CO 80305, United States
ISSN:
1051-8223
Access URL:
http://pascal-francis.inist.fr/vibad/index.php?action=search&terms=21991517
Rights:
Copyright 2009 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electrical engineering. Electroenergetics

Electronics
Accession Number:
edscal.21991517
Database:
PASCAL Archive

Further Information

Programmable Josephson voltage standards (PJVSs) in combination with fast switchable DC current sources have opened up new applications in the field of low-frequency AC metrology. The growing interest in output voltages of up to ±10 V initiated efforts by several National Metrological Institutes to realize 10 V PJVSs. Presently, only 10 V PJVSs from PTB based on SINIS junctions have been successfully incorporated into existing setups for AC metrology. However, the fabrication of 10 V SINIS arrays that are driven at 70 GHz suffers from very low yield. The recent technological progress made at NIST enabled the drop-in replacement of the low-yield SINIS arrays by more robust SNS arrays. The N-material is an amorphous NbxSi1-x alloy near the metal-insulator transition and is deposited by co-sputtering. For the first time, fully operational 1 V and 10 V PJVSs with SNS junctions that are suitable for a 70 GHz drive have been fabricated and tested. This work was done in close cooperation between NIST and PTB.