Result: 1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions

Title:
1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions
Authors:
ROY, Tania, PUZYREV, Yevgeniy S, EN XIA ZHANG, DASGUPTA, Sandeepan, FRANCIS, Sarah A, FLEETWOOD, Daniel M, SCHRIMPF, Ronald D, MISHRA, Umesh K, SPECK, James S, PANTELIDES, Sokrates T
Source:
Microelectronics and reliability. 51(2):212-216
Publisher Information:
Kidlington: Elsevier, 2011.
Publication Year:
2011
Physical Description:
print, 19 ref
Original Material:
INIST-CNRS
Subject Terms:
Electronics, Electronique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Transistors, Composé III-V, III-V compound, Compuesto III-V, Ammoniac, Ammonia, Amoníaco, Bruit basse fréquence, 1/f noise, Ruido baja frecuencia, Composé binaire, Binary compound, Compuesto binario, Composé ternaire, Ternary compound, Compuesto ternario, Contrainte électrique, Electric stress, Tensión eléctrica, Electron chaud, Hot electron, Electrón caliente, Lacune, Vacancy, Cavidad, Méthode fonctionnelle densité, Density functional method, Nitrure d'aluminium, Aluminium nitride, Aluminio nitruro, Nitrure de gallium, Gallium nitride, Galio nitruro, Tension pincement, Pinch off voltage, Voltage constricción, Transistor mobilité électron élevée, High electron mobility transistor, Transistor movibilidad elevada electrones, AlGaN, GaN
Document Type:
Conference Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN 37235, United States
Department of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235, United States
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, United States
Materials Department, University of California, Santa Barbara, CA 93106, United States
ISSN:
0026-2714
Access URL:
http://pascal-francis.inist.fr/vibad/index.php?action=search&terms=23825083
Rights:
Copyright 2015 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Accession Number:
edscal.23825083
Database:
PASCAL Archive

Further Information

The magnitude of the low-frequency 1/f noise in GaN/AlGaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions varies in response to hot-electron stress. Density-functional-theory (DFT) calculations show that the Ga vacancies that are responsible for the positive shift in pinch-off voltage due to electrical stress in Ga-rich and N-rich devices do not contribute significantly to the observed changes in 1/f noise with electrical stress. The N anti-sites that cause negative shifts in pinch-off voltage in ammonia-rich devices can cause an increase in the noise magnitude after stress. DFT calculations also show that singly hydrogenated and dehydrogenated Ga-N divacancies also can contribute to the noise before and after stress, respectively. A decrease in noise magnitude is also observed in some devices after stress.