Result: 1-W 3.3―16.3-V Boosting Wireless Power Transfer Circuits With Vector Summing Power Controller

Title:
1-W 3.3―16.3-V Boosting Wireless Power Transfer Circuits With Vector Summing Power Controller
Source:
IEEE journal of solid-state circuits. 47(11):2576-2585
Publisher Information:
New York, NY: Institute of Electrical and Electronics Engineers, 2012.
Publication Year:
2012
Physical Description:
print, 19 ref
Original Material:
INIST-CNRS
Subject Terms:
Electronics, Electronique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Appareillage électronique et fabrication. Composants passifs, circuits imprimés, connectique, Electronic equipment and fabrication. Passive components, printed wiring boards, connectics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Circuits intégrés, Integrated circuits, Conception. Technologies. Analyse fonctionnement. Essais, Design. Technologies. Operation analysis. Testing, Circuits intégrés par fonction (dont mémoires et processeurs), Integrated circuits by function (including memories and processors), Circuits électriques, optiques et optoélectroniques, Electric, optical and optoelectronic circuits, Propriétés des circuits, Circuit properties, Circuits électroniques, Electronic circuits, Convertisseurs de signal, Signal convertors, Mémoire non volatile, Non volatile memory, Memoria no volátil, Boucle commande, Control loop, Bucle control, Carte mémoire, Memory card, Tarjeta memoria, Circuit intégré, Integrated circuit, Circuito integrado, Circuit mémoire, Memory circuit, Circuito memoria, Commande puissance, Power control, Control potencia, Commande tension, Voltage control, Control tensión, Convertisseur courant continu, Direct current convertor, Convertidor corriente continua, Convertisseur tension, Voltage converter, Convertidor voltaje, Electronique puissance, Power electronics, Electrónica potencia, Emetteur, Transmitter, Emisor, Evaluation performance, Performance evaluation, Evaluación prestación, Haute tension, High voltage, Alta tensión, Mémoire flash, Flash memory, Memoria flash, Redresseur, Rectifier, Rectificador, Structure MOS, MOS structure, Estructura MOS, Technologie MOS complémentaire, Complementary MOS technology, Tecnología MOS complementario, Temps réponse, Response time, Tiempo respuesta, Transfert énergie, Energy transfer, Transferencia energía, Transmission énergie, Power transmission, Electricité sans fil, Wireless electricity, -Coils, MOS devices, memory card, power control, voltage control, voltage-boosting circuits, wireless power transmission
Document Type:
Conference Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Department of Electronics and Electrical Engineering, Keio University, Yokohama, Kanagawa 223-8522, Japan
ISSN:
0018-9200
Rights:
Copyright 2014 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Accession Number:
edscal.26691441
Database:
PASCAL Archive

Further Information

This paper presents SD-card-size wireless power transfer system for large-volume contactless memory cards. Voltage is boosted simultaneously with power transfer, which eliminates the dc―dc converter or charge-pump circuit for data write operation into the flash memory chip. The proposed approach reduces the number of components and BOM cost and improves the total power efficiency. A vector summing technique is proposed to control the transmitting power and secondary side voltage. The transmitter and rectifier have been designed and fabricated using 0.18-μm-CMOS with high voltage option. Voltage boost from 3.3 to 16.3 V and 1-W power transfer with 50% total efficiency have been successfully demonstrated, and the response time for the power control loop is shorter than 35 μs.