Treffer: 1/f Noise in HgCdTe Focal-Plane Arrays

Title:
1/f Noise in HgCdTe Focal-Plane Arrays
Authors:
KINCH, M. A, STRONG, R. L, SCHAAKE, C. A
Source:
2012 U.S. Workshop on the Physics and Chemistry of II-VI MaterialsJournal of electronic materials. 42(11):3243-3251
Publisher Information:
Heidelberg: Springer, 2013.
Publication Year:
2013
Physical Description:
print, 10 ref
Original Material:
INIST-CNRS
Subject Terms:
Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Metallurgy, welding, Métallurgie, soudage, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Generalites, General, Instruments, appareillage, composants et techniques communs à plusieurs branches de la physique et de l'astronomie, Instruments, apparatus, components and techniques common to several branches of physics and astronomy, Techniques et équipements généraux, General equipment and techniques, Capteurs (chimiques, optiques, électriques, de mouvement, de gaz, etc.); télédétection, Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Matériaux particuliers, Specific materials, Autres semiconducteurs, Other semiconductors, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Dispositifs optoélectroniques, Optoelectronic devices, Bruit basse fréquence, 1/f noise, Ruido baja frecuencia, Courant obscurité, Dark current, Corriente obscuridad, Diode, Diodo, Dislocation, Dislocación, Défaut, Defect, Defecto, Détecteur, Detector, Fluctuation charge, Charge fluctuation, Matrice plan focal, Focal plane arrays, Photodiode, Fotodiodo, Photodétecteur, Photodetector, Fotodetector, Piège, Trap, Trampa, Rayonnement IR moyen, Mid infrared radiation, Radiación infrarroja media, Semiconducteur II-VI, II-VI semiconductors, 0707D, 8105D, 8560D, 8560G, HgCdTe, diodes, focal-plane arrays, infrared
Document Type:
Konferenz Conference Paper
File Description:
text
Language:
English
Author Affiliations:
DRS ITS, Dallas, TX, United States
ISSN:
0361-5235
Access URL:
http://pascal-francis.inist.fr/vibad/index.php?action=search&terms=27928502
Rights:
Copyright 2015 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics

Metrology

Physics and materials science
Accession Number:
edscal.27928502
Database:
PASCAL Archive

Weitere Informationen

Characterization of mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) HgCdTe focal-plane arrays (FPAs) indicates that limitations on operability at elevated temperatures are due to detector dark current and excess 1/f noise. Dark-current models in HgCdTe are well established and understood; however, the same cannot be said for 1/f noise. In this paper we propose two models for separate sources of 1/f noise in HgCdTe photodiodes based upon charge fluctuations out of McWhorter-like surface traps. The two 1/f noise components are designated as (1) systemic, being associated with passivated external surfaces of the diodes, and (2) isolated defect, being, it is proposed, associated with the internal surfaces of built-in physical defects such as dislocations. The models are utilized to explain data measured on LWIR and MWIR test-diode structures, and predictions are made regarding the performance of MWIR and LWIR FPAs at elevated temperatures.