Treffer: Optimized Cell Programming for Flash Memories With Quantizers : 2012 IEEE International Symposium on Information Theory

Title:
Optimized Cell Programming for Flash Memories With Quantizers : 2012 IEEE International Symposium on Information Theory
Authors:
MINGHAI QIN, YAAKOBI, Eitan, SIEGEL, Paul H
Source:
IEEE transactions on information theory. 60(5):2780-2795
Publisher Information:
New York, NY: Institute of Electrical and Electronics Engineers, 2014.
Publication Year:
2014
Physical Description:
print, 17 ref
Original Material:
INIST-CNRS
Subject Terms:
Telecommunications, Télécommunications, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Telecommunications et theorie de l'information, Telecommunications and information theory, Théorie de l'information, du signal et des communications, Information, signal and communications theory, Théorie de l'information, Information theory, Algorithme optimal, Optimal algorithm, Algoritmo óptimo, Algorithme parallèle, Parallel algorithm, Algoritmo paralelo, Complexité algorithme, Algorithm complexity, Complejidad algoritmo, Interférence intercellulaire, Intercell interference, Interferencia intercelular, Optimisation, Optimization, Optimización, Programmation parallèle, Parallel programming, Programación paralela, Quantificateur, Quantifier, Cuantificador, Rétroaction, Feedback regulation, Retroacción, Système n niveaux, Multilevel system, Sistema n niveles, flash memory programming, intercell interference
Document Type:
Fachzeitschrift Article
File Description:
text
Language:
English
Author Affiliations:
Department of Electrical and Computer Engineering and the Center for Magnetic Recording Research, University of California, San Diego, La Jolla, CA 92093, United States
Department of Electrical Engineering, California Institute of Technology, Pasadena, CA 91125, United States
ISSN:
0018-9448
Access URL:
http://pascal-francis.inist.fr/vibad/index.php?action=search&terms=28496052
Rights:
Copyright 2015 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Telecommunications and information theory
Accession Number:
edscal.28496052
Database:
PASCAL Archive

Weitere Informationen

Multilevel flash memory contains blocks of cells that represent data by the amount of charge stored in them. The cell writing—or programming—process applies specified voltages in a sequential manner, injecting charge to achieve a desired level. Reducing a cell level requires a costly block erasure, so programming only increases cell levels. Parallel programming, whereby a common voltage is applied to a group of cells to inject charge simultaneously, simplifies circuitry and increases programming speed. However, cell-to-cell variations and limited programming round can adversely affect its precision. In this paper, we consider algorithms for efficient cell programming. Since cell levels are quantized to a discrete set of values, our objective is to minimize the number of cells that are not quantized to their target levels. For a specified number of programming rounds, we derive an optimal parallel programming algorithm with complexity that is polynomial in the number of cells. We extend the algorithm to account for intercell interference, where the voltage applied to a cell can affect the level of adjacent cells. We then consider noisy programming of a single cell, with and without feedback about the cell level. In both scenarios, we present an algorithm that, for a given number of programming rounds, minimizes the probability of an incorrect cell level.