ZHANG, Y., & ANG, D. S. (2007, January 1). Non-classical hot-electron mechanism and its implications on the reliability and scalability of the high-κ dielectric N-MOS Flash memory cell. 84(9-10). Amsterdam: Elsevier Science, 2007. Retrieved from http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=18853479
ISO-690 (author-date, English)ZHANG, Y and ANG, D. S, 2007. Non-classical hot-electron mechanism and its implications on the reliability and scalability of the high-κ dielectric N-MOS Flash memory cell. In: [online]. Amsterdam: Elsevier Science, 2007. 1 January 2007. Available from: http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=18853479
Modern Language Association 9th editionZHANG, Y., and D. S. ANG. Non-classical hot-electron mechanism and its implications on the reliability and scalability of the high-κ dielectric N-MOS Flash memory cell. no. 9-10, Amsterdam: Elsevier Science, 2007., 2007, http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=18853479.
Mohr Siebeck - Recht (Deutsch - Österreich)Emerald - Harvard
ZHANG, Y. and ANG, D.S. (2007), “Non-classical hot-electron mechanism and its implications on the reliability and scalability of the high-κ dielectric N-MOS Flash memory cell”, in , Vol. 84, Amsterdam: Elsevier Science, 2007., available at: http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=18853479.