KOTABE, A., YANAGAWA, Y., AKIYAMA, S., & SEKIGUCHI, T. (2010, Januar 1). 0.5-V Low-VT CMOS Preamplifier for Low-Power and High-Speed Gigabit-DRAM Arrays. 45(11). New York, NY: Institute of Electrical and Electronics Engineers, 2010. Abgerufen von http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=23387572

KOTABE, Akira, YANAGAWA, Yoshimitsu, AKIYAMA, Satoru und SEKIGUCHI, Tomonori, 2010. 0.5-V Low-VT CMOS Preamplifier for Low-Power and High-Speed Gigabit-DRAM Arrays. In: [online]. New York, NY: Institute of Electrical and Electronics Engineers, 2010. 1 Januar 2010. Available from: http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=23387572

KOTABE, A., Y. YANAGAWA, S. AKIYAMA, und T. SEKIGUCHI. 0.5-V Low-VT CMOS Preamplifier for Low-Power and High-Speed Gigabit-DRAM Arrays. Nr. 11, New York, NY: Institute of Electrical and Electronics Engineers, 2010., 2010, http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=23387572.

KOTABE, A., YANAGAWA, Y., AKIYAMA, S. und SEKIGUCHI, T. (2010), „0.5-V Low-VT CMOS Preamplifier for Low-Power and High-Speed Gigabit-DRAM Arrays“, in , Bd. 45, New York, NY: Institute of Electrical and Electronics Engineers, 2010., verfügbar unter: http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=23387572.