• Influence of dual Ge/C pre-amo...

Result: Influence of dual Ge/C pre-amorphization implantation on the Ni1−xPtxSi phase nucleation and growth mechanisms

Title:
Influence of dual Ge/C pre-amorphization implantation on the Ni1−xPtxSi phase nucleation and growth mechanisms
Authors:
Guillemin, S. ⁎, Gergaud, P., Bernier, N., Lachal, L., Mazen, F., Jannaud, A., Nemouchi, F., Rodriguez, Ph.
Source:
In Microelectronic Engineering 1 May 2021 244-246
Database:
ScienceDirect