Result: A combinatorial methodology for optimizing oxide/semiconductor interface with atomic interfacial layers
Title:
A combinatorial methodology for optimizing oxide/semiconductor interface with atomic interfacial layers
Authors:
Source:
Combinatorial and composition spread techniques in materials and device development II (San Jose CA, 22-23, 25 January 2001)SPIE proceedings series. :1-16
Publisher Information:
Bellingham WA: SPIE, 2001.
Publication Year:
2001
Physical Description:
print, 18 ref
Original Material:
INIST-CNRS
Subject Terms:
Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Telecommunications, Télécommunications, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Interfaces, Fabrication microélectronique (technologie des matériaux et des surfaces), Microelectronic fabrication (materials and surfaces technology), Analyse structurale, Structural analysis, Análisis estructural, Composition chimique, Chemical composition, Composición química, Constante diélectrique, Permittivity, Constante dieléctrica, Couche interfaciale, Interfacial layer, Capa interfacial, Couche mince semiconductrice, Semiconductor thin films, Couche oxyde, Oxide layer, Capa óxido, Couche épitaxique, Epitaxial film, Capa epitáxica, Cérium oxyde, Cerium oxide, Cerio óxido, Dépôt laser pulsé, Pulsed laser deposition, Gradient température, Temperature gradient, Gradiente temperatura, Microscopie électronique transmission, Transmission electron microscopy, Microscopía electrónica transmisión, Méthode combinatoire, Combinatorial method, Método combinatorio, Méthodologie, Methodology, Metodología, Résultat expérimental, Experimental result, Resultado experimental, Silicium, Silicon, Silicio, Stabilité thermique, Thermal stability, Estabilidad térmica, Strontium oxyde, Strontium oxide, Estroncio óxido, Structure interface, Interface structure, Estructura interfaz, Titane oxyde, Titanium oxide, Titanio óxido
Document Type:
Conference
Conference Paper
File Description:
text
Language:
English
Author Affiliations:
COMET-NIRIM, National Institute for Research in Inorganic Materials 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
National Research Institute for Metals 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
Millennium Project-NIRIM, National Institute for Research in Inorganic Materials 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama, Kanagawa, 226-8503, Japan
Ceramic Materials and Structure Laboratory Tokyo Institute of Technology 4259 Nagatsuda, Midori-ku, Yokohama, Kanagawa 226-8503, Japan
National Research Institute for Metals 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
Millennium Project-NIRIM, National Institute for Research in Inorganic Materials 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama, Kanagawa, 226-8503, Japan
Ceramic Materials and Structure Laboratory Tokyo Institute of Technology 4259 Nagatsuda, Midori-ku, Yokohama, Kanagawa 226-8503, Japan
Rights:
Copyright 2001 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Accession Number:
edscal.1019971
Database:
PASCAL Archive
Further Information
A combinatorial methodology was employed to investigate oxide materials/semiconductor interfaces for future devices. For this purpose, a temperature gradient pulsed laser deposition to find optimum growth condition and transmission electron microscopy for structure and composition analysis were used. Newly proposed the micro sampling method with focused ion beam was applied to fabricate the specimen from the interested region in a shorter term. In growing oxide materials on Si substrate, a proper termination was found to be inevitable for avoiding surface oxidation. Arsenic was used to obtain a durable surface of Si in oxygen atmosphere. CeO2 and SrTiO3 were tried to grow and the interfaces were characterized using these method.