Result: Temperature-gradient and composition-spread deposition of epitaxial oxide films and high throughput characterization

Title:
Temperature-gradient and composition-spread deposition of epitaxial oxide films and high throughput characterization
Source:
Combinatorial and composition spread techniques in materials and device development II (San Jose CA, 22-23, 25 January 2001)SPIE proceedings series. :17-26
Publisher Information:
Bellingham WA: SPIE, 2001.
Publication Year:
2001
Physical Description:
print, 15 ref
Original Material:
INIST-CNRS
Subject Terms:
Electronics, Electronique, Optics, Optique, Condensed state physics, Physique de l'état condensé, Physics, Physique, Telecommunications, Télécommunications, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Interfaces, Fabrication microélectronique (technologie des matériaux et des surfaces), Microelectronic fabrication (materials and surfaces technology), Conduction thermique, Thermal conduction, Conducción térmica, Couche oxyde, Oxide layer, Capa óxido, Couche épitaxique, Epitaxial film, Capa epitáxica, Croissance film, Film growth, Diffractomètre RX, X ray diffractometer, Difractómetro rayos X, Dispositif SQUID, SQUID devices, Epitaxie jet moléculaire, Molecular beam epitaxy, Fabrication microélectronique, Microelectronic fabrication, Fabricación microeléctrica, Faisceau laser, Laser beam, Haz láser, Gradient température, Temperature gradient, Gradiente temperatura, Microscopie champ proche, Scanning probe microscopy, Microscopía campo próximo, Méthode combinatoire, Combinatorial method, Método combinatorio, Propriété transport, Transport properties, Propiedad transporte, Résultat expérimental, Experimental result, Resultado experimental, Structure interface, Interface structure, Estructura interfaz, Système mesure, Measuring system, Sistema medida, Traitement matériau, Material processing, Tratamiento material
Document Type:
Conference Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8502, Japan
Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
Frontier Collaborative Research Center, Tokyo Institute of Technology, Yokohama 226-8503, Japan
Combinatorial Materials Exploration and Technology (COMET), Tsukuba 305-0044, Japan
CREST, Japan Science & Technology Corporation, NIRIM, Tokyo 169-0072, Japan
Rights:
Copyright 2001 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Accession Number:
edscal.1019972
Database:
PASCAL Archive

Further Information

We have developed a laser molecular beam epitaxy system capable of the temperature-gradient and/or composition-spread integration of thin films in a substrate. The latter is achieved by using a moving mask system synchronizing with target exchange and laser pulse. The former employs a substrate holder having a controlled asymmetric thermal conduction heated by a focused Nd:YAG continuous wave laser beam. A concurrent x-ray diffractometer can immediately characterize the dependences of the lattice constant and crystalline quality on the film growth temperature and composition. The temperature-gradient method is very useful for revealing an optimum substrate temperature for epitaxial thin film growth. Several other characterization techniques such as magnetic field microscope and parallel transport measurement system developed for characterizing composition-spread thin films are presented.