Result: Growth of 3 and 4 gallium arsenide crystals by the vertical gradient freeze (VGF) method
Title:
Growth of 3 and 4 gallium arsenide crystals by the vertical gradient freeze (VGF) method
Authors:
Source:
American crystal growth and epitaxy 1999Journal of crystal growth. 211(1-4):157-162
Publisher Information:
Amsterdam: Elsevier, 2000.
Publication Year:
2000
Physical Description:
print, 21 ref
Original Material:
INIST-CNRS
Subject Terms:
Crystallography, Cristallographie cristallogenèse, Geology, Géologie, Metallurgy, welding, Métallurgie, soudage, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Generalites, General, Instruments, appareillage, composants et techniques communs à plusieurs branches de la physique et de l'astronomie, Instruments, apparatus, components and techniques common to several branches of physics and astronomy, Informatique en physique expérimentale, Computers in experimental physics, Modélisation et simulation par ordinateur, Computer modeling and simulation, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Méthodes de croissance cristalline; physique de la croissance cristalline, Methods of crystal growth; physics of crystal growth, Croissance en phase fondue; fusion de zone et purification de zone, Growth from melts; zone melting and refining, Composé minéral, Inorganic compounds, Addition silicium, Silicon additions, Composé binaire, Binary compounds, Croissance cristalline en phase fondue, Crystal growth from melts, Dopage, Doping, Etude expérimentale, Experimental study, Etude théorique, Theoretical study, Gallium arséniure, Gallium arsenides, Gradient vertical, Vertical gradient, Gradiente vertical, Matériau semiconducteur, Semiconductor materials, Modélisation, Modelling, Optimisation, Optimization, Simulation numérique, Digital simulation, As Ga, GaAs:Si, GaAs
Document Type:
Conference
Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Department of Materials Science (WW VI), Crystal Growth Laboratory, University of Erlangen-Nürnberg. Martensstr. 7., 91058 Erlangen, Germany
ISSN:
0022-0248
Rights:
Copyright 2000 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Metrology
Physics and materials science
Physics and materials science
Accession Number:
edscal.1349172
Database:
PASCAL Archive
Further Information
Results of the vertical gradient freeze (VGF) growth of Si-doped (3) and semi-insulating (4) GaAs crystals are shown. The VGF process conditions were optimised with the aid of numerical simulations using the so-called inverse modelling. Experimental results and predictions from the computer simulation (software CrysVUN + +) are quantitatively compared with respect to the power versus time profiles of the heaters, and qualitatively with respect to the shapes of the solid-liquid interface and the growth rate.