Result: Superconducting MgB2 thin films grown by a two-step process for tunnel junctions

Title:
Superconducting MgB2 thin films grown by a two-step process for tunnel junctions
Authors:
UCHIYAMA, Tetsuji, TAKEDA, Tomohiro, KOGA, Hiroko, IGUCHI, Ienari
Source:
The 2004 Applied Superconductivity Conference, Jacksonville, FL, USA, October 3-8, 2004IEEE transactions on applied superconductivity. 15(2):3325-3328
Publisher Information:
New York, NY: Institute of Electrical and Electronics Engineers, 2005.
Publication Year:
2005
Physical Description:
print, 20 ref 3
Original Material:
INIST-CNRS
Subject Terms:
Electronics, Electronique, Electrical engineering, Electrotechnique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Dispositifs supraconducteurs, Superconducting devices, Couche mince supraconductrice, Superconducting thin films, Couche mince, Thin film, Capa fina, Dispositif supraconducteur quantique, Superconducting quantum interferometer device, Dispositivo supraconductor cuántico, Décollement épitaxique, Lift off, Desprendimiento epitáxico, Jonction tunnel, Tunnel junction, Unión túnel, Module multipuce, Multichip module, Modulo multipulga, Supraconducteur haute température, High temperature superconductor, Supraconductor alta temperatura, Technologie MESA, MESA technology, Tecnología MESA, Température critique, Critical temperature, Temperatura crítica, Tôle forte, Plate metal, Chapa espesa, Usinage, Machining, Mecanizado, Lift-off procedure, MgB2 thin films, mesa structure, two-step process
Document Type:
Conference Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Tokyo Institute of Technology, Tokyo, Japan
ISSN:
1051-8223
Access URL:
http://pascal-francis.inist.fr/vibad/index.php?action=search&terms=16924523
Rights:
Copyright 2005 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Accession Number:
edscal.16924523
Database:
PASCAL Archive

Further Information

We present two novel preparation methods making use of the two-step process for superconducting MgB2 thin films. We call them the cap and melt (CM) and the metal-plate cap and melt (MCM) methods. The MCM method, which is an improved CM method, enables us to raise more Mg pressure locally in the sample than the CM method. Using the MCM method, the MgB2 thin films with Tc > 30 K were obtained. We have also succeeded in fabricating MgB2 mesa structures of the size of 15 μm × 15 μm-75 μm × 75 μm useful for tunnel-junction fabrication. For mesa-structure fabrication, a lift-off procedure was employed in the MCM method to avoid the slow milling rate of MgB2 material. The MgB2 mesas showed almost the same critical temperature as that of the single films, as measured from the observation of Meissner state of the mesa by a scanning superconducting quantum interference device microscopy.