Result: Monolithic above-IC resonator technology for integrated architectures in mobile and wireless communication

Title:
Monolithic above-IC resonator technology for integrated architectures in mobile and wireless communication
Source:
IEEE International Solid-State Circuits Conference (ISSCC 2005), [San Francisco, CA, USA, February 6-10, 2005]IEEE journal of solid-state circuits. 41(1):7-16
Publisher Information:
New York, NY: Institute of Electrical and Electronics Engineers, 2006.
Publication Year:
2006
Physical Description:
print, 15 ref
Original Material:
INIST-CNRS
Subject Terms:
Electronics, Electronique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Circuits intégrés, Integrated circuits, Conception. Technologies. Analyse fonctionnement. Essais, Design. Technologies. Operation analysis. Testing, Dispositifs à ondes acoustiques, piézoélectriques, piézorésistifs, Acoustic wave devices, piezoelectric and piezoresistive devices, Circuits électriques, optiques et optoélectroniques, Electric, optical and optoelectronic circuits, Propriétés des circuits, Circuit properties, Circuits électroniques, Electronic circuits, Amplificateurs, Amplifiers, Matériel informatique, Hardware, Equipements d'entrée-sortie, Input-output equipment, Accès multiple répartition code, Code division multiple access, Acceso múltiple división código, Amplificateur faible bruit, Low noise amplifier, Amplificador bajo ruido, Circuit intégré monolithique, Monolithic integrated circuit, Circuito integrado monolítico, Circuit intégré, Integrated circuit, Circuito integrado, Conception intégrée, Integrated design, Concepción integrada, Dispositif onde acoustique volume, Bulk acoustic wave devices, Dispositif onde acoustique, Acoustic wave device, Dispositivo onda acústica, Fabrication microélectronique, Microelectronic fabrication, Fabricación microeléctrica, Filtre onde acoustique, Acoustic wave filter, Filtro onda acústica, Filtre passif, Passive filter, Filtro pasivo, Interface utilisateur, User interface, Interfase usuario, Large bande, Wide band, Banda ancha, Microusinage, Micromachining, Micromaquinado, Onde acoustique, Acoustic wave, Onda acústica, Onde volume, Bulk wave, Onda volumen, Pastille électronique, Wafer, Pastilla electrónica, Perte insertion, Insertion loss, Pérdida inserción, Récepteur radioélectrique, Radio receivers, Résonateur piézoélectrique, Piezoelectric resonator, Resonador piezoeléctrico, Technologie BiCMOS, BiCMOS technology, Tecnología BiCMOS, Transmission large bande, Wide band transmission, Transmisión banda ancha, integrated circuit fabrication, micromachining, piezoelectric resonator filters, portable radio communication, radio receivers
Document Type:
Conference Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Swiss Center for Electronics and Microtechnology (CSEM), 2007 Neuchâtel, Switzerland
STMicroelectronics, Central R&D, 38926 Crolles, France
CEA-LETI, 38054 Grenoble, France
STMicroelectronics, AST, 1228 Plan-les-Ouates, Switzerland
ISSN:
0018-9200
Rights:
Copyright 2006 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Accession Number:
edscal.17481957
Database:
PASCAL Archive

Further Information

This paper demonstrates the feasibility of an above-IC bulk acoustic wave technology for wireless applications. A double-lattice bulk acoustic wave (BAW) filter with balanced input and output has been designed and integrated as a post-process directly above 0.25 μm BiCMOS wafers comprising RF circuits. This filter, featuring moderate insertion loss of -3 dB and extreme out-of-band rejection (> -50 dB) is used in a simplified RF front-end receiver for the WCDMA standard, as well as in a new type of filtering LNA comprising two broadband amplifiers and one BAW filter.