Result: Novel high fill-factor, small pitch, reticulated InSb IR FPA design

Title:
Novel high fill-factor, small pitch, reticulated InSb IR FPA design
Source:
Infrared technology and applications XXXI (28 March-1 April 2005, Orlando, Florida, USA)Proceedings of SPIE, the International Society for Optical Engineering. :899-906
Publisher Information:
Bellingham, Wash., USA: SPIE, 2005.
Publication Year:
2005
Physical Description:
print, 2
Original Material:
INIST-CNRS
Subject Terms:
Electronics, Electronique, Metrology and instrumentation, Métrologie et instrumentation, Optics, Optique, Physics, Physique, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Generalites, General, Instruments, appareillage, composants et techniques communs à plusieurs branches de la physique et de l'astronomie, Instruments, apparatus, components and techniques common to several branches of physics and astronomy, Instrumentation, équipements et techniques en infrarouge, onde submillimétrique, hyperfréquence et radiofréquence, Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques, Bolomètres; récepteurs et détecteurs en infrarouge, onde submillimétrique, hyperfréquence et radiofréquence, Bolometer; infrared, submillimeter wave, microwave and radiowave receivers and detectors, Domaines classiques de la physique (y compris les applications), Fundamental areas of phenomenology (including applications), Optique, Optics, Formation des images et traitement optique, Imaging and optical processing, Fonctions de transfert optique et de transfert de modulation, Modulation and optical transfer functions, Détecteur IR, Infrared detectors, Détecteur rayonnement, Radiation detectors, Fiabilité, Reliability, Fonction transfert modulation, Modulation transfer function, Función transferencia modulación, Imagerie thermique, Thermal imaging, Matrice plan focal, Focal plane arrays, Microoptique, Micro-optics, Photolithographie, Photolithography, Pixel, Plasma, 0757K, 4230L
Document Type:
Conference Conference Paper
File Description:
text
Language:
English
Author Affiliations:
L-3 Communications Cincinnati Electronics, Mason, Ohio 45040, United States
ISSN:
0277-786X
Rights:
Copyright 2006 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Metrology

Physics: optics
Accession Number:
edscal.17833299
Database:
PASCAL Archive

Further Information

The evolution of InSb Focal Plane Arrays (FPAs) at L-3 Communications Cincinnati Electronics (L-3 CE) has resulted in large format, high reliability, and high yields for 256x256, 640x512, 1Kx1K and even 2Kx2K formats using our patented front-side illuminated, reticulated pixel design. Baseline processes matured at 30um pitch and gradually were made producible at 25um pitch. Recent progress in process technology, specifically dry etch plasma processes and photolithography tools, has created a new set of processes/design capabilities which enable 15um pixel pitch FPAs, thus allowing us to develop a 15um pitch FPA with 4 times as many pixels, in the same foot print as the previous 30um pitch designs. We have developed a new 15um pitch, reticulated pixel design, implemented on a 512x512 format, which can then be sized into larger arrays, similar to the evolution that occurred on 30um pitch FPAs. As unit cell dimensions shrink by a factor of two, both the feature size and the alignment tolerances begin to limit optical fill factor. Addition of a novel micro-optic design, which optimizes signal collection to near 100% efficiency while maintaining near theoretical pixel MTF, will be presented.