Treffer: Investigations of the influence of dicing techniques on the strength properties of thin silicon

Title:
Investigations of the influence of dicing techniques on the strength properties of thin silicon
Authors:
SCHOENFELDER, Stephan, EBERT, Matthias, LANDESBERGER, Christof, BOCK, Karlheinz, BAGDAHN, Jörg
Source:
Microelectronics and reliability. 47(2-3):168-178
Publisher Information:
Oxford: Elsevier, 2007.
Publication Year:
2007
Physical Description:
print, 14 ref
Original Material:
INIST-CNRS
Subject Terms:
Electronics, Electronique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Circuits intégrés, Integrated circuits, Conception. Technologies. Analyse fonctionnement. Essais, Design. Technologies. Operation analysis. Testing, Dispositifs optoélectroniques, Optoelectronic devices, Dispositifs micro- et nanoélectromécaniques (mems/nems), Micro- and nanoelectromechanical devices (mems/nems), Energie, Energy, Energie naturelle, Natural energy, Energie solaire, Solar energy, Conversion photovoltaïque, Photovoltaic conversion, Cellules solaires. Cellules photoélectrochimiques, Solar cells. Photoelectrochemical cells, Cellule solaire, Solar cell, Célula solar, Circuit intégré, Integrated circuit, Circuito integrado, Dispositif microélectromécanique, Microelectromechanical device, Dispositivo microelectromecánico, Dispositif optoélectronique, Optoelectronic device, Dispositivo optoelectrónico, Essai flexion, Bending test, Ensayo flexion, Formation défaut, Defect formation, Formación defecto, Gravure, Engraving, Grabado, Loi Weibull, Weibull distribution, Ley Weibull, Matrice formage, Die, Matriz formadora, Packaging électronique, Electronic packaging, Packaging electrónico, Pastille électronique, Wafer, Pastilla electrónica, Procédé voie sèche, Dry process, Procedimiento vía seca, Propriété mécanique, Mechanical properties, Propiedad mecánica, Rectification surface, Grinding, Rectificación superficie, Relaxation contrainte, Stress relaxation, Relajación tensión, Rupture, Ruptura, Résistance mécanique, Strength, Resistencia mecánica, Structure 3 dimensions, Three dimensional structure, Estructura 3 dimensiones, Technologie tranchée, Trench technology, Tecnología trinchera
Document Type:
Konferenz Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Fraunhofer -lnstitute for Mechanics of Materials, Heideallee 19, 06120 Halle, Germany
Fraunhofer-Institute for Reliability and Microintegration, Hansastrasse 27d, 80686 Munich, Germany
ISSN:
0026-2714
Access URL:
http://pascal-francis.inist.fr/vibad/index.php?action=search&terms=18518710
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics

Energy
Accession Number:
edscal.18518710
Database:
PASCAL Archive

Weitere Informationen

Thin silicon offers a variety of new possibilities in microelectronical, solar and micromechanical industries, e.g. for 3D-integration (stacked dies), thin microelectromechanical packages or thin single crystalline solar cells. The wafers in this investigation were thinned back by grinding and subsequent spin etching steps for stress relief followed by separation into single test dies by sawing or etching. In order to characterize and optimize relevant process steps in terms of quality and fabrication yield, the mechanical properties were investigated considering the defect formation and strength. In this paper the influence of three different dicing technologies on the mechanical strength of thin silicon samples was investigated by 3-point bending tests. Sawing, Dicing-by-Thinning with sawn grooves and Dicing-by-Thinning with dry-etched trenches were used as dicing technologies. Analytical and numerical calculations were performed to calculate fracture stresses from fracture forces in 3-point bending tests taking into account the non-linear relationship of force and displacement during testing. Thus the fracture stress as a parameter of strength could be calculated for all tested samples. The results were statistically evaluated by the Weibull distribution based on the weakest link theory. This approach allows a more comprehensive understanding of the influence of the process on strength properties independently of geometric factors. Samples, being separated by Dicing-by-Thinning, have much higher strength than simply sawed samples. If trenches are fabricated by dry-etched process the strength can be increased tremendously.