Result: TEM analysis of an interface layer formed by the anti-surfactant treatment on a GaN template
Title:
TEM analysis of an interface layer formed by the anti-surfactant treatment on a GaN template
Authors:
Source:
Thirteenth International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XIII), Phoenix Seagaia Resort, Miyazaki, 22-26 May 2006Journal of crystal growth. 298:284-287
Publisher Information:
Amsterdam: Elsevier, 2007.
Publication Year:
2007
Physical Description:
print, 5 ref
Original Material:
INIST-CNRS
Subject Terms:
Crystallography, Cristallographie cristallogenèse, Geology, Géologie, Metallurgy, welding, Métallurgie, soudage, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Structure des liquides et des solides; cristallographie, Structure of solids and liquids; crystallography, Défauts et impuretés dans les cristaux; microstructure, Defects and impurities in crystals; microstructure, Défauts linéaires: dislocations, disinclinaisons, Linear defects: dislocations, disclinations, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Matériaux particuliers, Specific materials, Autres semiconducteurs, Other semiconductors, Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie, Methods of deposition of films and coatings; film growth and epitaxy, Théorie et modèles de la croissance de films, Theory and models of film growth, Epitaxie en phase vapeur; croissance en phase vapeur, Vapor phase epitaxy; growth from vapor phase, Agent surface, Surfactants, Composé III-V, III-V compound, Compuesto III-V, Composé minéral, Inorganic compounds, Couche mince, Thin films, Diagramme diffraction, Diffraction pattern, Diagrama difracción, Diffraction électron, Electron diffraction, Epitaxie phase vapeur, VPE, Gallium nitrure, Gallium nitrides, Interface, Interfaces, Microscopie électronique transmission, Transmission electron microscopy, Mécanisme croissance, Growth mechanism, Mecanismo crecimiento, Méthode MOVPE, MOVPE method, Método MOVPE, Nitrure, Nitrides, Phase cristalline, Crystalline phase, Fase cristalina, Réaction dirigée, Template reaction, Reacción dirigida, Semiconducteur III-V, III-V semiconductors, Silicium composé, Silicon compounds, Spectrométrie dispersive, Dispersive spectrometry, Espectrometría dispersiva, 6172L, 6855A, 8105E, 8115K, Analyse RX dispersion énergie, Energy-dispersive X-ray analysis, Dislocation filetée, Threading dislocation, GaN, Si, 68.37.Lp; 68.55.Jk; 81.15.Kk, Al. Defects; Al. Growth models; Al. Transmission electron microscopy; A2. Metalorganic vapor phase epitaxy; Bl. Nitrides; B2. Semiconducting III-V materials
Document Type:
Conference
Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Art, Science and Technology Center for Cooperative Research, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
Department of Applied Science, Electronics & Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
Nanoscience Development and Support Team, RIKEN, Wako, Saitama 351-0198, Japan
Department Information Processing, Tokyo Institute of Technology, Midori-ku, Yokohama 226-8503, Japan
Department of Applied Science, Electronics & Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
Nanoscience Development and Support Team, RIKEN, Wako, Saitama 351-0198, Japan
Department Information Processing, Tokyo Institute of Technology, Midori-ku, Yokohama 226-8503, Japan
ISSN:
0022-0248
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Physics and materials science
Physics of condensed state: structure, mechanical and thermal properties
Physics of condensed state: structure, mechanical and thermal properties
Accession Number:
edscal.18578747
Database:
PASCAL Archive
Further Information
Transmission electron microscope (TEM) analysis was performed for the anti-surfactant (AS)-treated interface of GaN thin films deposited by the metal-organic vapor-phase epitaxy method. It was revealed that the AS-treatment with supplying a gas-source of tetraethyl-silicon (TESi) forms an interface layer of about 1 nm thickness. The electron diffraction pattern for the interface layer shows a streak along [0001] at about one-thrid positions between hkil =0000 and 1210. The point analysis of energy dispersive X-ray spectroscopy (EDS) confirmed that the interface layer contains a certain amount of silicon. These results revealed that the interface layer is a crystalline phase of silicon compound. The effect of the interface layer on the morphology of threading dislocations was also discussed in terms of coherency of the interface layer with GaN.