Result: The reactive ion etching characteristics of AlGaN/GaN SLs and etch-induced damage study of n-GaN using Cl2/SiCl4/Ar plasma

Title:
The reactive ion etching characteristics of AlGaN/GaN SLs and etch-induced damage study of n-GaN using Cl2/SiCl4/Ar plasma
Authors:
RUI LI, TAO DAI, LING ZHU, HUAPU PAN, KE XU, BEI ZHANG, ZHIJIAN YANG, GUOYI ZHANG, ZIZHAO GAN, XIAODONG HU
Source:
Thirteenth International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XIII), Phoenix Seagaia Resort, Miyazaki, 22-26 May 2006Journal of crystal growth. 298:375-378
Publisher Information:
Amsterdam: Elsevier, 2007.
Publication Year:
2007
Physical Description:
print, 16 ref
Original Material:
INIST-CNRS
Subject Terms:
Crystallography, Cristallographie cristallogenèse, Geology, Géologie, Metallurgy, welding, Métallurgie, soudage, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Physique des gaz, des plasmas et des decharges electriques, Physics of gases, plasmas and electric discharges, Physique des plasmas et décharges électriques, Physics of plasmas and electric discharges, Applications des plasmas, Plasma applications, Gravure et nettoyage, Etching and cleaning, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Matériaux particuliers, Specific materials, Autres semiconducteurs, Other semiconductors, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Circuits intégrés, Integrated circuits, Conception. Technologies. Analyse fonctionnement. Essais, Design. Technologies. Operation analysis. Testing, Fabrication microélectronique (technologie des matériaux et des surfaces), Microelectronic fabrication (materials and surfaces technology), Aluminium nitrure, Aluminium nitrides, Composé III-V, III-V compound, Compuesto III-V, Composé minéral, Inorganic compounds, Couche oxyde, Oxide layer, Capa óxido, Diode laser, Laser diodes, Effet Hall, Hall effect, Endommagement, Damage, Fabrication microélectronique, Microelectronic fabrication, Fabricación microeléctrica, Gallium nitrure, Gallium nitrides, Getter, Getters, Gravure ionique réactive, Reactive ion etching, Grabado iónico reactivo, Gravure plasma, Plasma etching, Grabado plasma, Laser semiconducteur, Semiconductor lasers, Propriété électrique, Electrical properties, Semiconducteur III-V, III-V semiconductors, Spectre photoélectron RX, X-ray photoelectron spectra, Stoechiométrie, Stoichiometry, Superréseau, Superlattices, Traitement par plasma, Plasma assisted processing, Vitesse gravure, Etching rate, Velocidad grabado, 5277B, 8105E, 8540H, AlGaN, AlxGa1-xN, GaN, 52.77.-j, Al. Defects; Al. Etching; Al. Surfaces; A3. Superlattices; B2. Semiconducting III-V materials; B3. Laser diodes
Time:
8540
Document Type:
Conference Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Research Center for Wide Gap Semiconductors of Peking University, State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, 100871 Beijing, China
ISSN:
0022-0248
Access URL:
http://pascal-francis.inist.fr/vibad/index.php?action=search&terms=18578768
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics

Physics and materials science

Physics of gases, plasmas and electric discharges
Accession Number:
edscal.18578768
Database:
PASCAL Archive

Further Information

In this study, the etching characteristics of AlxGa1-xN/GaN superlattices with x = 0.11 and 0.21 of Al and n-GaN with Cl2/SiCl4/Ar plasma using reactive ion etching (RIE) system were investigated. By varying gas ratio and rf power, it was found that SiCl4 is an effective getter to remove residual oxygen in the chamber and has a strong physical sputtering effect to remove the oxide layer during the etching, and a nearly nonselective smooth etching of AlxGa1-xN/GaN SLs with the high etch rate of 220nm/min could be obtained. X-ray photoelectron spectroscopy (XPS) and Hall measurements were employed together to reveal the correlation between stoichiometry and electrical changes of n-GaN induced by plasma etching. Combining with N2O plasma post-etch treatments to restore etched surfaces, those results suggested that oxygen not only influences morphology of the Al-containing samples, but also electrical properties of n-GaN by changing the status of oxygen-related defects, which may play crucial roles in determining the nature of the damage.