RUI LI, TAO DAI, LING ZHU, HUAPU PAN, KE XU, BEI ZHANG, ZHIJIAN YANG, GUOYI ZHANG, ZIZHAO GAN, & XIAODONG HU. (2007, Januar 1). The reactive ion etching characteristics of Al Ga N/Ga N SLs and etch-induced damage study of n-Ga N using Cl2/Si Cl4/Ar plasma. 298. Amsterdam: Elsevier, 2007. Abgerufen von http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=18578768
ISO-690 (author-date, English)RUI LI, TAO DAI, LING ZHU, HUAPU PAN, KE XU, BEI ZHANG, ZHIJIAN YANG, GUOYI ZHANG, ZIZHAO GAN und XIAODONG HU, 2007. The reactive ion etching characteristics of Al Ga N/Ga N SLs and etch-induced damage study of n-Ga N using Cl2/Si Cl4/Ar plasma. In: [online]. Amsterdam: Elsevier, 2007. 1 Januar 2007. Available from: http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=18578768
Modern Language Association 9th editionRUI LI, TAO DAI, LING ZHU, HUAPU PAN, KE XU, BEI ZHANG, ZHIJIAN YANG, GUOYI ZHANG, ZIZHAO GAN, und XIAODONG HU. The reactive ion etching characteristics of Al Ga N/Ga N SLs and etch-induced damage study of n-Ga N using Cl2/Si Cl4/Ar plasma. Amsterdam: Elsevier, 2007., 2007, http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=18578768.
Mohr Siebeck - Recht (Deutsch - Österreich)Emerald - Harvard
RUI LI, TAO DAI, LING ZHU, HUAPU PAN, KE XU, BEI ZHANG, ZHIJIAN YANG, GUOYI ZHANG, ZIZHAO GAN und XIAODONG HU. (2007), „The reactive ion etching characteristics of Al Ga N/Ga N SLs and etch-induced damage study of n-Ga N using Cl2/Si Cl4/Ar plasma“, in , Bd. 298, Amsterdam: Elsevier, 2007., verfügbar unter: http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=18578768.