Treffer: Uniform hot-wall MOCVD epitaxial growth of 2 inch AlGaN/GaN HEMT structures
Title:
Uniform hot-wall MOCVD epitaxial growth of 2 inch AlGaN/GaN HEMT structures
Authors:
Source:
First International Symposium on Growth of Nitrides (ISGN-1), Linköping, 4-7 June 2006Journal of crystal growth. 300(1):100-103
Publisher Information:
Amsterdam: Elsevier, 2007.
Publication Year:
2007
Physical Description:
print, 10 ref
Original Material:
INIST-CNRS
Subject Terms:
Crystallography, Cristallographie cristallogenèse, Geology, Géologie, Metallurgy, welding, Métallurgie, soudage, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Méthodes de croissance cristalline; physique de la croissance cristalline, Methods of crystal growth; physics of crystal growth, Croissance en phase vapeur, Growth from vapor, Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie, Methods of deposition of films and coatings; film growth and epitaxy, Théorie et modèles de la croissance de films, Theory and models of film growth, Dépôt chimique en phase vapeur (incluant le cvd activé par plasma, mocvd, etc.), Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.), Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Transistors, Aluminium nitrure, Aluminium nitrides, Composé minéral, Inorganic compounds, Couche tampon, Buffer layer, Capa tampón, Couche épitaxique, Epitaxial layers, Croissance cristalline en phase vapeur, Crystal growth from vapors, Densité porteur charge, Carrier density, Epaisseur couche, Layer thickness, Espesor capa, Epitaxie, Epitaxy, Gallium nitrure, Gallium nitrides, Gradient température, Temperature gradients, Hétérostructure, Heterostructures, Mécanisme croissance, Growth mechanism, Mecanismo crecimiento, Méthode MOCVD, MOCVD, Nitrure, Nitrides, Pastille électronique, Wafers, Résistivité couche, Sheet resistivity, Semiconducteur III-V, III-V semiconductors, Silicium carbure, Silicon carbides, Transistor mobilité électron élevée, High electron mobility transistors, 6855A, 8110B, 8115G, 8530T, AlGaN, AlxGa1-xN, GaN, SiC, 81.05.Ea, 81.15.Gh, 85.30.-z, A3. Metalorganic chemical vapor deposition, B3. High electron mobility transistors, Bl. Nitrides
Document Type:
Konferenz
Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Department of Physics, Chemistry and Biology, Linkoping University, 581 83 Linkoping, Sweden
ISSN:
0022-0248
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Physics and materials science
Physics and materials science
Accession Number:
edscal.18633532
Database:
PASCAL Archive
Weitere Informationen
The hot-wall metalorganic chemical vapor deposition (MOCVD) concept has been applied to the growth of AlxGa1-xN/GaN high electron mobility transistor (HEMT) device heterostructures on 2 inch 4H-SiC wafers. Due to the small vertical and horizontal temperature gradients inherent to the hot-wall MOCVD concept the variations of all properties of a typical HEMT heterostructure are very small over the wafer: GaN buffer layer thickness of 1.83 μm±1%, Al content of the A1xGa1-xN barrier of 27.7 ±0.1%, AlxGa1-xN barrier thickness of 25nm±4%, sheet carrier density of 1.05 x 1013cm-2±4%, pinch-off voltage of-5.3 V±3%, and sheet resistance of 4490±1%.