KAKANAKOVA -GEORGIEVA, A., FORSBERG, U., IVANOV, I. G., & JANZEN, E. (2007, January 1). Uniform hot-wall MOCVD epitaxial growth of 2 inch Al Ga N/Ga N HEMT structures. 300(1). Amsterdam: Elsevier, 2007. Retrieved from http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=18633532
ISO-690 (author-date, English)KAKANAKOVA -GEORGIEVA, A, FORSBERG, U, IVANOV, I. G and JANZEN, E, 2007. Uniform hot-wall MOCVD epitaxial growth of 2 inch Al Ga N/Ga N HEMT structures. In: [online]. Amsterdam: Elsevier, 2007. 1 January 2007. Available from: http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=18633532
Modern Language Association 9th editionKAKANAKOVA -GEORGIEVA, A., U. FORSBERG, I. G. IVANOV, and E. JANZEN. Uniform hot-wall MOCVD epitaxial growth of 2 inch Al Ga N/Ga N HEMT structures. no. 1, Amsterdam: Elsevier, 2007., 2007, http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=18633532.
Mohr Siebeck - Recht (Deutsch - Österreich)Emerald - Harvard
KAKANAKOVA -GEORGIEVA, A., FORSBERG, U., IVANOV, I.G. and JANZEN, E. (2007), “Uniform hot-wall MOCVD epitaxial growth of 2 inch Al Ga N/Ga N HEMT structures”, in , Vol. 300, Amsterdam: Elsevier, 2007., available at: http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=18633532.