Result: Volume inversion mobility in SOI MOSFETs for different thin body orientations

Title:
Volume inversion mobility in SOI MOSFETs for different thin body orientations
Authors:
SVERDLOV, V, UNGERSBOECK, E, KOSINA, H, SELBERHERR, S
Source:
EUROSOI'06 Conference. Selected papersSolid-state electronics. 51(2):299-305
Publisher Information:
Oxford: Elsevier Science, 2007.
Publication Year:
2007
Physical Description:
print, 28 ref
Original Material:
INIST-CNRS
Subject Terms:
Electronics, Electronique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Transistors, Algorithme, Algorithm, Algoritmo, Champ intense, High field, Campo intenso, Couche ultramince, Ultrathin films, Densité porteur charge, Charge carrier density, Concentración portador carga, Etude comparative, Comparative study, Estudio comparativo, Méthode Monte Carlo, Monte Carlo method, Método Monte Carlo, Simulation numérique, Numerical simulation, Simulación numérica, Sous bande, Subband, Subbanda, Structure bande, Band structure, Estructura banda, Technologie silicium sur isolant, Silicon on insulator technology, Tecnología silicio sobre aislante, Transistor MOSFET, MOSFET, Transistor effet champ grille double, Dual gate field effect transistor, Transistor efecto campo rejilla doble, Transistor effet champ, Field effect transistor, Transistor efecto campo, Transistor grille double, Dual gate transistor, Transistor de compuerta doble, Double-gate MOSFETs, Mobility, Monte Carlo simulations, Volume inversion
Document Type:
Conference Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Institute for Microelectronics, TU Vienna, Gusshausstr. 27-29, 1040 Vienna, Austria
ISSN:
0038-1101
Access URL:
http://pascal-francis.inist.fr/vibad/index.php?action=search&terms=18658375
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Accession Number:
edscal.18658375
Database:
PASCAL Archive

Further Information

Low field mobility in double- and single-gate structures is analyzed for (1 00) and (110) SOI substrate orientation. A Monte Carlo algorithm for vanishing driving fields allows the calculation of the mobility for arbitrary scattering rates and band structure without further approximations. Due to volume inversion, mobility in double-gate ultra-thin body (110) SOI FETs is enhanced in comparison with the mobility of single-gate structures in the whole effective field range. In double-gate (1 00) structures the mobility decreases below the single-gate value for high effective fields. It is argued that the twice as high carrier concentration in double-gate FETs causes significant occupation of higher subbands, where mobility is low, and that additional inter-subband scattering channels for the lowest subband are opened. These effects partly compensate the mobility enhancement due to volume inversion and lead to a mobility decrease in double-gate (100) structures.