Result: Study of Al thermal diffusion in ZnTe using secondary ion mass spectroscopy
Title:
Study of Al thermal diffusion in ZnTe using secondary ion mass spectroscopy
Authors:
Source:
Wide band gap II-VI semiconductors: growth, characterization and applications, Warsaw, 4-8 September 2006Physica status solidi. B. Basic research. 244(5):1685-1690
Publisher Information:
Berlin: Wiley, 2007.
Publication Year:
2007
Physical Description:
print, 8 ref
Original Material:
INIST-CNRS
Subject Terms:
Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Nanotechnologies, nanostructures, nanoobjects, Nanotechnologies, nanostructures, nanoobjets, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Structure des liquides et des solides; cristallographie, Structure of solids and liquids; crystallography, Défauts et impuretés dans les cristaux; microstructure, Defects and impurities in crystals; microstructure, Dopage et implantation d'impuretés dans les composés iii-v et ii-vi, Doping and impurity implantation in iii-v and ii-vi semiconductors, Propriétés de transport (non électroniques), Transport properties of condensed matter (nonelectronic), Diffusion dans les solides, Diffusion in solids, Diffusion des impuretés, Diffusion of impurities, Addition aluminium, Aluminium additions, Coefficient diffusion, Diffusion coefficient, Coeficiente difusión, Compensation, Composé minéral, Inorganic compounds, Densité lacune, Vacancy density, Densidad vacuidad, Diffusion thermique, Thermal diffusion, Dopage, Doping, Hétérodiffusion, Impurity diffusion, Heterodifusión, Jonction p n, p n junctions, Métal transition composé, Transition element compounds, Profil profondeur, Depth profiles, Semiconducteur, Semiconductor materials, Spectre SIMS, Secondary ion mass spectra, Zinc tellurure, Zinc tellurides, 6172V, 6630J, ZnTe
Document Type:
Conference
Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Synchrotron Light Application Center, Saga University, 1 Honjo, Saga 840-8502, Japan
Department of Electrical and Electronic Engineering, Saga University, 1 Honjo, Saga 840-8502, Japan
Venture Business Laboratory, Saga University, 1 Honjo, Saga 840-8502, Japan
Department of Electrical and Electronic Engineering, Saga University, 1 Honjo, Saga 840-8502, Japan
Venture Business Laboratory, Saga University, 1 Honjo, Saga 840-8502, Japan
ISSN:
0370-1972
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Physics of condensed state: structure, mechanical and thermal properties
Accession Number:
edscal.18744660
Database:
PASCAL Archive
Further Information
The thermal diffusion of Al in ZnTe has been studied by using secondary ion mass spectroscopy. The relationships between the diffusion coefficient and the Al concentration were determined from Al depth profiles by a Boltzmann-Matano analysis. The diffusion coefficient depends on the Al concentration and it becomes large at the high doping level, probably due to the increase of Zn vacancy concentration attributed to the self-compensation effect. As a result of decrease in the diffusion coefficient at low Al concentration, a rapid decrease in the Al concentration was observed at the diffusion front. This would lead to the formation of highly abrupt p-n junctions, resulting in the fabrication of ZnTe light emitting diode with better performance.