Result: Structural properties of Ge doped CuGaSe2 films studied by Raman and Photoluminescence spectroscopy

Title:
Structural properties of Ge doped CuGaSe2 films studied by Raman and Photoluminescence spectroscopy
Authors:
THEODOROPOULOU, S, PAPADIMITRIOU, D, DOKA, S, SCHEDEL-NIEDRIG, Th, LUX-STERNER, M. Ch
Source:
Proceedings of Symposium O on thin film chalcogenide photovoltaic materials, EMRS 2006 conference, Nice, France, May 29-June 2, 2006Thin solid films. 515(15):5904-5908
Publisher Information:
Lausanne: Elsevier Science, 2007.
Publication Year:
2007
Physical Description:
print, 26 ref
Original Material:
INIST-CNRS
Subject Terms:
Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Metallurgy, welding, Métallurgie, soudage, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Structure des liquides et des solides; cristallographie, Structure of solids and liquids; crystallography, Défauts et impuretés dans les cristaux; microstructure, Defects and impurities in crystals; microstructure, Dopage et implantation d'impuretés dans d'autres matériaux, Doping and impurity implantation in other materials, Etat condense: structure electronique, proprietes electriques, magnetiques et optiques, Condensed matter: electronic structure, electrical, magnetic, and optical properties, Propriétés optiques, spectroscopie et autres interactions de la matière condensée avec les particules et le rayonnement, Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation, Photoluminescence, Sciences appliquees, Applied sciences, Energie, Energy, Energie naturelle, Natural energy, Energie solaire, Solar energy, Conversion photovoltaïque, Photovoltaic conversion, Cellules solaires. Cellules photoélectrochimiques, Solar cells. Photoelectrochemical cells, Addition germanium, Germanium additions, Addition indium, Indium additions, Cellule solaire, Solar cells, Couche mince, Thin films, Cuivre séléniure, Copper selenides, Dopage, Doping, Gallium séléniure, Gallium selenides, Germanium, Implantation ion, Ion implantation, Mode vibration, Vibrational modes, Photoluminescence, Polycristal, Polycrystals, Profil raie, Line shape, Spectrométrie Raman, Raman spectroscopy, Vibration réseau, Lattice vibrations, 6172W, 8460J, CuGaSe2, Ge doped CuGaSe2 films, Raman
Time:
7855
Document Type:
Conference Conference Paper
File Description:
text
Language:
English
Author Affiliations:
National Technical University of Athens, Department of Physics, 15780 Athens, Greece
Hahn-Meitner Institut, Glienicker Strasse 100, 14109 Berlin, Germany
ISSN:
0040-6090
Access URL:
http://pascal-francis.inist.fr/vibad/index.php?action=search&terms=18781058
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Energy

Physics of condensed state: electronic structure, electrical, magnetic and optical properties

Physics of condensed state: structure, mechanical and thermal properties
Accession Number:
edscal.18781058
Database:
PASCAL Archive

Further Information

The structural properties of Ge doped polycrystalline CuGaSe2 films with potential applications in solar cell device technology have been studied by Raman spectroscopy at 300 K and by Photoluminescence (PL) spectroscopy at 300 K and 2 K. The films were intentionally doped with max. 200 keV Ge ions using one- and three-stage ion implantation processes. The Raman spectra of as grown films are dominated by the A1-mode (breathing mode) of the CuGaSe2 absorber at 184 cm-1. It was found, that in doped films the Raman mode intensities are reduced and the B2-modes (TO at 249 cm-1 and LO at 273 cm-1) take over. This implies an increase in structural disorder induced, probably, by bond reorientation effects that favor excitation of asymmetric lattice vibrations (B2) instead of the symmetric ones (A1). Moreover, it was found, that the Raman bands of doped films exhibit asymmetric broadening representative of a Fano line-shape. Changes were more pronounced in films doped at one-stage. The PL-emission of films subjected to one-stage process was enhanced, which supports an increase in structural disorder particularly for these films. On the contrary, for films doped in three-stages, the PL bands are less intensive and the Raman bands are less broadened.