Result: Temperature treatment of semiconducting polymers : An X-ray reflectivity study

Title:
Temperature treatment of semiconducting polymers : An X-ray reflectivity study
Authors:
WERZER, Oliver, MATOY, Kurt, STROHRIEGL, Peter, RESEL, Roland
Source:
Proceedings of the ninth international conference on surface X-Ray and neutron scattering, Taipei, Taiwan, July 16-20, 2006Thin solid films. 515(14):5601-5605
Publisher Information:
Lausanne: Elsevier Science, 2007.
Publication Year:
2007
Physical Description:
print, 13 ref
Original Material:
INIST-CNRS
Subject Terms:
Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Metallurgy, welding, Métallurgie, soudage, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Structure et morphologie de couches minces, Thin film structure and morphology, Structure et morphologie; épaisseur, Structure and morphology; thickness, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Divers, Miscellaneous, Acrylique acide polymère, Acrylic acid polymer, Acrílico ácido polímero, Amine, Amines, Calorimétrie différentielle balayage, Differential scanning calorimetry, Copolymère, Copolymers, Couche mince, Thin films, Densité électron, Electron density, Diffraction RX, XRD, Dépendance température, Temperature dependence, Epaisseur couche, Layer thickness, Espesor capa, Film polymère, Polymer films, Morphologie, Morphology, Pastille électronique, Wafers, Polymère conjugué, Conjugated polymer, Polímero conjugado, Rugosité interface, Interface roughness, Réflexion RX, X-ray reflection, Semiconducteur organique, Organic semiconductors, Silicium, Silicon, Structure cristalline, Crystal structure, Température transition, Transition temperature, Traitement thermique, Heat treatments, Transistor couche mince, Thin film transistors, Transition phase, Phase transitions, Transición fase, 6855J, Si, Thiophène polymère, F8T2, P3HT, Poly aryl amine, Temperature study, X-ray reflectivity
Time:
8530
Document Type:
Conference Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Institute of Solid State Physics, Graz University of Technology, Petersgasse 16, 8010 Graz, Austria
Macromolecular Chemistry I, University of Bayreuth, 95440 Bayreuth, Germany
ISSN:
0040-6090
Access URL:
http://pascal-francis.inist.fr/vibad/index.php?action=search&terms=18782668
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics

Physics of condensed state: structure, mechanical and thermal properties
Accession Number:
edscal.18782668
Database:
PASCAL Archive

Further Information

The influence of temperature treatment on three types of conjugated polymer thin films, named poly(3-hexylthiophene) (P3HT), polyarylamine (PAA) and octylfluorene-bithiophene copolymer (F8T2) is studied. A detailed knowledge of the film morphology and crystalline structure is important since the performance of organic thin film transistors is extremely sensitive to small changes of morphology and structure. Samples are prepared via a spin-casting process on thermal oxidized silicon wafers. The influence of heat treatment in the range from ambient temperatures to 600 K is studied with specular X-ray reflectivity, X-ray diffraction and differential scanning calorimetry. The morphological parameters like layer thicknesses, electron densities and roughnesses of the interface and of the surface are calculated from the XRR measurements. The maximum change of layer thickness due to heat treatment is 15% of the initial layer thicknesses. The maximum variation of the mean electron densities are about 20% and the rms surface roughness vary from 2 Å up to 20 Å as a result of annealing. Interface roughness show variation of about 1 Å. Strong variations of the morphological parameters next to phase transition temperatures are observed as well.