Treffer: Structural characterization of thin amorphous Si films
Title:
Structural characterization of thin amorphous Si films
Authors:
Source:
Proceedings of the ninth international conference on surface X-Ray and neutron scattering, Taipei, Taiwan, July 16-20, 2006Thin solid films. 515(14):5620-5623
Publisher Information:
Lausanne: Elsevier Science, 2007.
Publication Year:
2007
Physical Description:
print, 11 ref
Original Material:
INIST-CNRS
Subject Terms:
Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Metallurgy, welding, Métallurgie, soudage, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Structure des liquides et des solides; cristallographie, Structure of solids and liquids; crystallography, Défauts et impuretés dans les cristaux; microstructure, Defects and impurities in crystals; microstructure, Défauts microscopiques (cavités, inclusions, etc.), Microscopic defects (voids, inclusions, etc.), Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Structure et morphologie de couches minces, Thin film structure and morphology, Composition et identification des phases, Composition and phase identification, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Nanomatériaux et nanostructures : fabrication et caractèrisation, Nanoscale materials and structures: fabrication and characterization, Divers, Other topics in nanoscale materials and structures, Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie, Methods of deposition of films and coatings; film growth and epitaxy, Depôt par pulvérisation cathodique, Deposition by sputtering, Analyse structurale, Structural analysis, Análisis estructural, Cavité dans réseau, Voids, Couche mince, Thin films, Diffusion RX centrale, Small angle X ray scattering, Difusión rayo X central, Défaut cristallin, Crystal defects, Dépôt physique phase vapeur, Physical vapor deposition, Dépôt pulvérisation, Sputter deposition, Liaison disponible, Dangling bonds, Monocristal, Monocrystals, Nanostructure, Nanostructures, Pulvérisation cathodique, Cathode sputtering, Recuit thermique, Thermal annealing, Recocido térmico, Résonance paramagnétique éléctronique, Electron paramagnetic resonance, Silicium, Silicon, Structure cristalline, Crystal structure, Température ambiante, Ambient temperature, Transformation phase, Phase transformations, 6172Q, 6855N, 8115C, Couche mince amorphe, Amorphous thin film, Si, Substrat Si, Amorphous silicon, Small angle X-ray scattering
Time:
8107
Document Type:
Konferenz
Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Faculty of Electrical Engineering and Computing, University of Zagreb, Zagreb, Croatia
R. Boskovic Institute, P.O. Box 180, 10000 Zagreb, Croatia
Sincrotrone Trieste, SS 14, km 163.5, Basovizza (TS), Italy
R. Boskovic Institute, P.O. Box 180, 10000 Zagreb, Croatia
Sincrotrone Trieste, SS 14, km 163.5, Basovizza (TS), Italy
ISSN:
0040-6090
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Physics and materials science
Physics of condensed state: structure, mechanical and thermal properties
Physics of condensed state: structure, mechanical and thermal properties
Accession Number:
edscal.18782672
Database:
PASCAL Archive
Weitere Informationen
We present a study of structural changes occurring in thin amorphous silicon (a-Si). The a-Si films were deposited on single-crystalline Si substrates held at room temperature or 200 °C by magnetron sputtering of a Si target in pure Ar atmosphere, and therefore the films were hydrogen-free. All samples were annealed in vacuum and subsequently studied by EPR and GISAXS. A strong decrease in the dangling bonds content at lower annealing temperatures, and then an increase of it at around 550 °C, suggested significant structural changes. In parallel the samples were studied by GISAXS which confirmed changes at the nanometric scale attributed to voids in the material. A nice correlation of the results of the two techniques shows advantages of this approach in the analysis of structural changes in a-Si material.