Result: Yttrium oxide thin films: Influence of the oxygen vacancy network organization on the microstructure
Title:
Yttrium oxide thin films: Influence of the oxygen vacancy network organization on the microstructure
Authors:
Source:
Proceedings of Symposium J on Synthesis Processing and Characterization of Nanoscale Functional Oxide Films - EMRS 2006 Conference, Nice, May 29-June 2, 2006Thin solid films. 515(16):6385-6390
Publisher Information:
Lausanne: Elsevier Science, 2007.
Publication Year:
2007
Physical Description:
print, 13 ref
Original Material:
INIST-CNRS
Subject Terms:
Crystallography, Cristallographie cristallogenèse, Electronics, Electronique, Metallurgy, welding, Métallurgie, soudage, Condensed state physics, Physique de l'état condensé, Sciences exactes et technologie, Exact sciences and technology, Physique, Physics, Etat condense: structure, proprietes mecaniques et thermiques, Condensed matter: structure, mechanical and thermal properties, Structure des liquides et des solides; cristallographie, Structure of solids and liquids; crystallography, Défauts et impuretés dans les cristaux; microstructure, Defects and impurities in crystals; microstructure, Dopage et implantation d'impuretés dans d'autres matériaux, Doping and impurity implantation in other materials, Surfaces et interfaces; couches minces et trichites (structure et propriétés non électroniques), Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties), Structure et morphologie de couches minces, Thin film structure and morphology, Structure et morphologie; épaisseur, Structure and morphology; thickness, Composition et identification des phases, Composition and phase identification, Domaines interdisciplinaires: science des materiaux; rheologie, Cross-disciplinary physics: materials science; rheology, Science des matériaux, Materials science, Méthodes de dépôt de films et de revêtements; croissance de films et épitaxie, Methods of deposition of films and coatings; film growth and epitaxy, Dépôt assisté par faisceaux électroniques et ioniques; placage ionique, Ion and electron beam-assisted deposition; ion plating, Composé minéral, Inorganic compounds, Couche mince, Thin films, Diffraction RX, XRD, Equilibre phase, Phase equilibria, Hors équilibre, Nonequilibrium, Implantation ion, Ion implantation, Lacune, Vacancies, Microscopie électronique transmission, Transmission electron microscopy, Microstructure, Mécanisme formation, Formation mechanism, Mecanismo formacion, Métal transition composé, Transition element compounds, Pulvérisation faisceau ionique, Ion beam sputtering, Pulverización haz iónico, Réseau cubique, Cubic lattices, Réseau monoclinique, Monoclinic lattices, Résultat expérimental, Experimental result, Resultado experimental, Silicium, Silicon, Spectrométrie perte énergie électron, EEL spectroscopy, Stoechiométrie, Stoichiometry, Structure cristalline, Crystal structure, Transformation phase, Phase transformations, Transition phase, Phase transitions, Transición fase, Yttrium oxyde, Yttrium oxides, 6172W, 6855J, 6855N, 8115J, Si, Substrat MgO, Substrat SrTiO3, Y2O3, Crystallographic phases, Oxygen vacancy network, Rare Earth Oxyde, Thin film
Document Type:
Conference
Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Laboratoire de Métallurgie Physique, Université de Poitiers, CNRS-SP2MI-, BP 30179-86962, Chasseneuil-Futroscope, France
Laboratoire de Physique des Solides, CNRS/Université Paris-Sud, UMR 8502, 91405 Orsay, France
Laboratoire de Physique des Solides, CNRS/Université Paris-Sud, UMR 8502, 91405 Orsay, France
ISSN:
0040-6090
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Physics and materials science
Physics of condensed state: structure, mechanical and thermal properties
Physics of condensed state: structure, mechanical and thermal properties
Accession Number:
edscal.18794114
Database:
PASCAL Archive
Further Information
Y2O3 thin films are deposited by ion beam sputtering on Si, SrTiO3 and MgO substrates. In order to obtain a better knowledge on the phase transition mechanisms in yttrium oxide, the effects of ion implantation have been studied as a function of the initial microstructure of thin films. The different microstructures for the as-deposited and implanted samples have been studied and characterized by means of X ray diffraction, High Resolution Transmission Electron Microscopy and Electron Energy Loss Spectroscopy and are compared to the cubic-C and monoclinic-B phase of Y2O3. The experimental results show clearly the presence of non-equilibrium phases in the implanted and non-implanted thin films. A particular attention is paid to the understanding of the relationship between the oxygen vacancy network organization, the stoichiometry and the formation mechanisms of these crystallographic phases.