• Theoretical investigation of p...

Treffer: Theoretical investigation of pattern printability of oxidized si and Ru capping models for extreme ultraviolet lithography (EUVL)

Title:
Theoretical investigation of pattern printability of oxidized si and Ru capping models for extreme ultraviolet lithography (EUVL)
Authors:
KANG, In-Yong, AHN, Jinho, CHUNG YONG KIM, OH, Hye-Keun, CHUNG, Yong-Chae
Source:
Proceedings of the 32nd International Conference on Micro- and Nano-Engineering, Barcelona, 17-20 September 2006Microelectronic engineering. 84(5-8):1023-1026
Publisher Information:
Amsterdam: Elsevier Science, 2007.
Publication Year:
2007
Physical Description:
print, 20 ref
Original Material:
INIST-CNRS
Subject Terms:
Electronics, Electronique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Fabrication microélectronique (technologie des matériaux et des surfaces), Microelectronic fabrication (materials and surfaces technology), Champ électromagnétique, Electromagnetic field, Campo electromagnético, Evaluation performance, Performance evaluation, Evaluación prestación, Fabrication microélectronique, Microelectronic fabrication, Fabricación microeléctrica, Facteur réflexion, Reflectance, Coeficiente reflexión, Imprimabilité, Printability, Imprimibilidad, Lithographie UV, UV lithography, Litografía UV, Oxydation, Oxidation, Oxidación, Photolithographie, Photolithography, Fotolitografía, Rayonnement UV extrême, Vacuum ultraviolet radiation, Radiación ultravioleta extrema, Revêtement, Coatings, Revestimiento, Résistance oxydation, Oxidation resistance, Resistencia a la oxidación, Aerial image intensity, Capping layer, EUVL, Reflectivity, Ru/Mo/Si
Document Type:
Konferenz Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Department of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea, Republic of
Division of Information Display Engineering, Hanyang University, Seoul 133-791, Korea, Republic of
Physics Department, Hanyang University, Ansan 425-791, Korea, Republic of
ISSN:
0167-9317
Access URL:
http://pascal-francis.inist.fr/vibad/index.php?action=search&terms=18807367
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Accession Number:
edscal.18807367
Database:
PASCAL Archive

Weitere Informationen

The optical performance of potential capping materials, Ru and Si, were quantitatively investigated by simulating the reflectivity on a mask and aerial image intensity transferred through the system. The reflectivity on the capping surface was calculated according to the capping thickness variation by using the Fresnel equation. For the calculation of the aerial image intensity, SOLID-EUV, which is capable of rigorous electromagnetic-field computation, was employed. Through the investigation of pattern image characteristics for partially oxidized capping models, the Ru capping model turned out to show a higher EUV reflectivity, smaller line variation, and a higher oxidation sensitivity compared to the case of the Si capping model. It could be reasonably concluded that Ru can be proposed as a potential capping material for achieving a better optical performance considering the experimentally proven high oxidation stability of the Ru capping model.