KANG, I.-Y., AHN, J., CHUNG YONG KIM, OH, H.-K., & CHUNG, Y.-C. (2007, January 1). Theoretical investigation of pattern printability of oxidized si and Ru capping models for extreme ultraviolet lithography (EUVL). 84(5-8). Amsterdam: Elsevier Science, 2007. Retrieved from http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=18807367
ISO-690 (author-date, English)KANG, In-Yong, AHN, Jinho, CHUNG YONG KIM, OH, Hye-Keun and CHUNG, Yong-Chae, 2007. Theoretical investigation of pattern printability of oxidized si and Ru capping models for extreme ultraviolet lithography (EUVL). In: [online]. Amsterdam: Elsevier Science, 2007. 1 January 2007. Available from: http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=18807367
Modern Language Association 9th editionKANG, I.-Y., J. AHN, CHUNG YONG KIM, H.-K. OH, and Y.-C. CHUNG. Theoretical investigation of pattern printability of oxidized si and Ru capping models for extreme ultraviolet lithography (EUVL). no. 5-8, Amsterdam: Elsevier Science, 2007., 2007, http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=18807367.
Mohr Siebeck - Recht (Deutsch - Österreich)Emerald - Harvard
KANG, I.-Y., AHN, J., CHUNG YONG KIM, OH, H.-K. and CHUNG, Y.-C. (2007), “Theoretical investigation of pattern printability of oxidized si and Ru capping models for extreme ultraviolet lithography (EUVL)”, in , Vol. 84, Amsterdam: Elsevier Science, 2007., available at: http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=18807367.