Result: X-ray lithography for devices with high aspect ratio polymer submicron structures

Title:
X-ray lithography for devices with high aspect ratio polymer submicron structures
Authors:
MAPPES, Timo, ACHENBACH, Sven, MOHR, Juergen
Source:
Proceedings of the 32nd International Conference on Micro- and Nano-Engineering, Barcelona, 17-20 September 2006Microelectronic engineering. 84(5-8):1235-1239
Publisher Information:
Amsterdam: Elsevier Science, 2007.
Publication Year:
2007
Physical Description:
print, 21 ref
Original Material:
INIST-CNRS
Subject Terms:
Electronics, Electronique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Fabrication microélectronique (technologie des matériaux et des surfaces), Microelectronic fabrication (materials and surfaces technology), Circuits électriques, optiques et optoélectroniques, Electric, optical and optoelectronic circuits, Propriétés des circuits, Circuit properties, Circuits électroniques, Electronic circuits, Filtres de fréquence, Frequency filters, Conditions opératoires, Process conditions, Condiciones operatorias, Décomposition fonction, Function decomposition, Descomposición función, Fabrication microélectronique, Microelectronic fabrication, Fabricación microeléctrica, Filtre IR, Infrared filter, Filtro IR, Filtre passe bande, Band pass filter, Filtro paso banda, Haute résolution, High resolution, Alta resolucion, Lithographie RX, X ray lithography, Litografía RX, Lithographie faisceau électron, Electron beam lithography, Litografía haz electrón, Masquage, Masking, Enmascaramiento, Micromachine, Micromáquina, Photolithographie, Photolithography, Fotolitografía, Polymère, Polymer, Polímero, Procédé fabrication, Manufacturing process, Procedimiento fabricación, Procédé revêtement, Coating process, Procedimiento revestimiento, Rapport aspect, Aspect ratio, Relación dimensional, Rayonnement synchrotron, Synchrotron radiation, Radiación sincrotrón, Revêtement centrifugation, Spin-on coatings, Résist, Resist, Resistencia, Tension superficielle, Surface tension, Tensión superficial, High aspect ratio, SAW, Submicron, X-ray lithography
Document Type:
Conference Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Universität Karlsruhe, Institut für Mikrostrukturtechnik (IMT), Kaiserstrasse 12, 76128 Karlsruhe, Germany
University of Saskatchewan, Department of Electrical and Computer Engineering, 57 Campus Dr, Saskatoon, SK, S7N 5A9, Canada
Forschungszentrum Karlsruhe, Institut für Mikrostrukturtechnik (IMT), Postfach 3640, 76021 Karlsruhe, Germany
ISSN:
0167-9317
Access URL:
http://pascal-francis.inist.fr/vibad/index.php?action=search&terms=18807417
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Accession Number:
edscal.18807417
Database:
PASCAL Archive

Further Information

Novel applications for micro systems, such as commercial devices for information transfer and biomedical analysis, nowadays require reduced lateral dimensions in the low submicron range. Applications like metallic band-pass-filters and transparent fluidic systems for single molecule analysis, both presented in this paper, at the same time depend on structure heights (thickness) of several microns, leading to high aspect ratios (thickness/minimum feature size, AR). The paper presents enhancements of process conditions (masking, coating, exposure, development) in high resolution X-ray lithography that allow the fabrication of the aforementioned devices. Spin coated Polymethylmethacrylate (PMMA) films of 2-11 μm thickness were structured using Synchrotron radiation (λc≈ 0.4 nm) and subsequent dip developed in GG developer. Three PMMA grades originally developed for electron beam lithography were characterized for this application. The contrast of the resist/developer systems examined is reduced at exposure doses below 1 kJ/cm3. Therefore, the exposure dose was set well above this value (nominally, to 4 kJ/cm3). Resist collapse due to surface tension during drying after development limits the achievable AR. The maximum AR is a function of the structure height for walls and columns. Increased pre-bake temperatures (180 °C instead of 111 °C) and a reduced surface tension in the development rinser (10 ppm fluorosurfactant) result in more stable structures and increase the achievable AR. AR exceeding 12 could be demonstrated for feature sizes down to 520 nm in 7.3 μm thick resists. Some devices presented were replicated in metal.