Treffer: Young's modulus and residual stress of DF PECVD silicon nitride for MEMS free-standing membranes
Title:
Young's modulus and residual stress of DF PECVD silicon nitride for MEMS free-standing membranes
Authors:
Source:
Proceedings of the 32nd International Conference on Micro- and Nano-Engineering, Barcelona, 17-20 September 2006Microelectronic engineering. 84(5-8):1296-1299
Publisher Information:
Amsterdam: Elsevier Science, 2007.
Publication Year:
2007
Physical Description:
print, 9 ref
Original Material:
INIST-CNRS
Subject Terms:
Electronics, Electronique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Essais, mesure, bruit et fiabilité, Testing, measurement, noise and reliability, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Circuits intégrés, Integrated circuits, Conception. Technologies. Analyse fonctionnement. Essais, Design. Technologies. Operation analysis. Testing, Fabrication microélectronique (technologie des matériaux et des surfaces), Microelectronic fabrication (materials and surfaces technology), Dispositifs micro- et nanoélectromécaniques (mems/nems), Micro- and nanoelectromechanical devices (mems/nems), Appareillage essai, Testing equipment, Aparato ensayo, Circuit accordable, Tunable circuit, Circuito acordable, Contrainte interne, Internal stress, Tensión interna, Contrainte résiduelle, Residual stress, Tensión residual, Couche mince, Thin film, Capa fina, Dispositif microélectromécanique, Microelectromechanical device, Dispositivo microelectromecánico, Dépôt chimique phase vapeur, Chemical vapor deposition, Depósito químico fase vapor, Etude comparative, Comparative study, Estudio comparativo, Fabrication microélectronique, Microelectronic fabrication, Fabricación microeléctrica, Mesure déformation, Deformation measurement, Medición deformación, Microstructure, Microestructura, Microusinage, Micromachining, Micromaquinado, Module Young, Young modulus, Módulo Young, Méthode PECVD, PECVD, Méthode numérique, Numerical method, Método numérico, Méthode élément fini, Finite element method, Método elemento finito, Technologie MOS complémentaire, Complementary MOS technology, Tecnología MOS complementario, CMOS compatible, Micromachined membranes, Silicon nitride, Tunable intrinsic stress
Document Type:
Konferenz
Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Istituto Fotonica e Nanotecnologie CNR, Via Cineto Romano 42, 00156 Roma, Italy
ISSN:
0167-9317
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Accession Number:
edscal.18807431
Database:
PASCAL Archive
Weitere Informationen
This paper addresses the simultaneous determination of the Young's modulus and the residual stress of thin silicon nitride films deposited by dual frequency plasma enhanced chemical vapour deposition, to be used in the fabrication of free-standing MEMS membranes. Load-deflection tests of circular membranes and measurements of the deformation of free-standing microbeams due to the internal-stress release were performed; parallely the microstructures were modelled by finite element analysis as a function of the Young's modulus and the internal stress. For each test structure a set of values of the Young's modulus and the internal stress was found and from their comparison the values for the deposited film can be determined.