Result: The GHz surface acoustic wave filters fabricated by using an alternating phase-shifting mask design method
Title:
The GHz surface acoustic wave filters fabricated by using an alternating phase-shifting mask design method
Authors:
Source:
Proceedings of the 32nd International Conference on Micro- and Nano-Engineering, Barcelona, 17-20 September 2006Microelectronic engineering. 84(5-8):1379-1383
Publisher Information:
Amsterdam: Elsevier Science, 2007.
Publication Year:
2007
Physical Description:
print, 6 ref
Original Material:
INIST-CNRS
Subject Terms:
Electronics, Electronique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Dispositifs à ondes acoustiques, piézoélectriques, piézorésistifs, Acoustic wave devices, piezoelectric and piezoresistive devices, Fabrication microélectronique (technologie des matériaux et des surfaces), Microelectronic fabrication (materials and surfaces technology), Champ proche, Near field, Campo próximo, Dispositif onde acoustique surface, Surface acoustic wave devices, Fabrication microélectronique, Microelectronic fabrication, Fabricación microeléctrica, Filtre onde acoustique surface, Surface acoustic wave filters, Haute fréquence, High frequency, Alta frecuencia, Largeur raie, Line width, Anchura raya espectral, Lithographie, Lithography, Litografía, Masque déphasage, Phase shifting masks, Photolithographie, Photolithography, Fotolitografía, Procédé fabrication, Manufacturing process, Procedimiento fabricación, Propriété électronique, Electronic properties, Propiedad electrónica, Alternating phase-shifting mask design method, Near field photolithography, Surface-acoustic wave filters
Document Type:
Conference
Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Institute of Electro-Optical Engineering, National Kaohsiung First University of Science and Technology, Kaohsiung 811, Tawain, Province of China
Department of Chemical Engineering, National Taiwan University of Science and Technology, Taipei 106, Tawain, Province of China
Department of Chemical Engineering, National Taiwan University of Science and Technology, Taipei 106, Tawain, Province of China
ISSN:
0167-9317
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Accession Number:
edscal.18807449
Database:
PASCAL Archive
Further Information
In this work a near field photolithographic (NFPL) process for the fabrication of the narrow gap SAW devices is applied. An ordinary mask and a special mask designed using the alternating phase-shifting mask design method were fabricated and compared. The electronic properties of the SAW devices fabricated using the specially designed mask were found to be better than those obtained using the ordinary mask. Designed by using an alternating phase-shifting mask design method, SAW devices could have the potential of reaching high operating frequencies over 3 GHz, possibly over 5 GHz, when the linewidth of the finger pattern is only 10 μm.