• Investigation of resistance ch...

Result: Investigation of resistance change characteristics with applied electric field on Ag/chalcogenide As2S3 and As40Ge10Se15S35 thin film structure

Title:
Investigation of resistance change characteristics with applied electric field on Ag/chalcogenide As2S3 and As40Ge10Se15S35 thin film structure
Authors:
KOO, Yong-Woon, KIM, Jin-Hong, CHO, Won-Ju, CHUNG, Hong-Bay
Source:
Proceedings of the 32nd International Conference on Micro- and Nano-Engineering, Barcelona, 17-20 September 2006Microelectronic engineering. 84(5-8):1652-1655
Publisher Information:
Amsterdam: Elsevier Science, 2007.
Publication Year:
2007
Physical Description:
print, 7 ref
Original Material:
INIST-CNRS
Subject Terms:
Electronics, Electronique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Circuits intégrés, Integrated circuits, Conception. Technologies. Analyse fonctionnement. Essais, Design. Technologies. Operation analysis. Testing, Circuits intégrés par fonction (dont mémoires et processeurs), Integrated circuits by function (including memories and processors), Stockage et lecture de l'information, Storage and reproduction of information, Enregistrement et reproduction des signaux audio et vidéo, Recording and replay of audio and video signals, Basse tension, Low voltage, Baja tensión, Capacité électrique, Capacitance, Capacitancia, Champ électrique, Electric field, Campo eléctrico, Circuit intégré, Integrated circuit, Circuito integrado, Couche mince, Thin film, Capa fina, Diminution coût, Cost lowering, Reducción costes, Effet fréquence, Frequency effect, Efecto frecuencia, Effet température, Temperature effect, Efecto temperatura, Enregistrement, Recording, Registro, Matériau dopé, Doped materials, Mémoire EEPROM, EEPROM memory, Memoria EEPROM, Mémoire accès direct, Random access memory, Memoria acceso directo, Mémoire non volatile, Non volatile memory, Memoria no volátil, Semiconducteur intrinsèque, Intrinsic semiconductor, Semiconductor intrínseco, Seuil tension, Voltage threshold, Umbral tensión, Stockage donnée, Data storage, Almacenamiento datos, Identification radiofréquence, Radio frequency identification, Identificación por radiofrecuencia, Ag doped thin film, Chalcogenide, PMC-RAM, ReRAM, Resistance change
Document Type:
Conference Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Department of Electronic Materials Engineering, Kwangwoon University, Seoul, Korea, Republic of
ISSN:
0167-9317
Access URL:
http://pascal-francis.inist.fr/vibad/index.php?action=search&terms=18807516
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Accession Number:
edscal.18807516
Database:
PASCAL Archive

Further Information

In the present work, we investigated the effects of frequency, temperature and applied electric field directions on the resistance change characteristics ofAg/As2S3 and Ag/As40Ge10Se15S35 chalcogenide thin film structures. In off-state operation mode, the resistance changes with the temperature and the frequency showed the intrinsic semiconductor characteristics with the resistance and the capacitance component. On the other hand, the metallic conductor characteristics with only resistance component were observed in on-state operation mode. And we obtained that the Rreverse/Rforward ratio of Ag/As2S3 thin film was ∼106, which is 10 times larger than that of Ag/As40-Ge10Se15S35 thin film. Both values are acceptable as a high sensing margin for read-out of storage data in Ag doped chalcogenide thin film. And high recording speed (60-70 ns) and low threshold voltage were achieved when the Ag/chalcogenide thin film layer thickness ratio is about 10%. Additionally, the Ag/chalcogenide layer thickness ratio was closely related to the reversible resistance change amount. Therefore, we believe that the Ag/chalcogenide films are effective materials for non-volatile, low current and, potentially, low cost for the next generation of non-volatile memory applications such as RFID chips to replace EEPROM.