Result: Thermal-stability improvement of LaON thin film formed using nitrogen radicals
Title:
Thermal-stability improvement of LaON thin film formed using nitrogen radicals
Authors:
Source:
INFOS 2007: Proceedings of the 15th Biennial Conference on Insulating Films on Semiconductors, June 20-23, 2007, Glyfada Athens, GreeceMicroelectronic engineering. 84(9-10):1894-1897
Publisher Information:
Amsterdam: Elsevier Science, 2007.
Publication Year:
2007
Physical Description:
print, 10 ref
Original Material:
INIST-CNRS
Subject Terms:
Electronics, Electronique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Transistors, Caractéristique électrique, Electrical characteristic, Característica eléctrica, Couche interfaciale, Interfacial layer, Capa interfacial, Couche mince diélectrique, Dielectric thin films, Couche mince, Thin film, Capa fina, Mobilité électron, Electron mobility, Movilidad electrón, Nitruration, Nitriding, Nitruración, Stabilité thermique, Thermal stability, Estabilidad térmica, Technologie NMOS, NMOS technology, Tecnología NMOS, Température recuit, Annealing temperature, Temperatura recocido, Transistor MOSFET, MOSFET, EOT, lanthanum oxide, lanthanum oxynitride, nitrogen radical
Document Type:
Conference
Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259-S2-20 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259-S2-20 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259-S2-20 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
ISSN:
0167-9317
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Accession Number:
edscal.18853471
Database:
PASCAL Archive
Further Information
This work reports the influence of nitridation on structural and electrical properties of La2O3 gate dielectric films. The issue of La2O3 is EOT increase after high temperature post metarization annealing (PMA). To overcome this problem, we incorporated nitrogen in La2O3. The EOT increase on the TaN/LaON and W/LaON structure is reduced compared with that on the W/La2O3structure. This is due to nitrogen in LaON and SiNx-rich interfacial layer which seems to remain after high temperature annealing. W/LaON nMOSFET is also successfully fabricated. Peak electron mobility of 96.2 cm2/V s was obtained.