Treffer: The effect of annealing temperature on the electrical properties of metal-ferroelectric (PbZr0.53Ti0.47O3 ) -insulator (ZrO2)-semiconductor (MFIS) thin-film capacitors
Title:
The effect of annealing temperature on the electrical properties of metal-ferroelectric (PbZr0.53Ti0.47O3 ) -insulator (ZrO2)-semiconductor (MFIS) thin-film capacitors
Authors:
Source:
INFOS 2007: Proceedings of the 15th Biennial Conference on Insulating Films on Semiconductors, June 20-23, 2007, Glyfada Athens, GreeceMicroelectronic engineering. 84(9-10):2014-2017
Publisher Information:
Amsterdam: Elsevier Science, 2007.
Publication Year:
2007
Physical Description:
print, 12 ref
Original Material:
INIST-CNRS
Subject Terms:
Electronics, Electronique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Circuits intégrés, Integrated circuits, Circuits intégrés par fonction (dont mémoires et processeurs), Integrated circuits by function (including memories and processors), Dispositifs diélectriques et dispositifs à base de verre et de solides amorphes, Dielectric, amorphous and glass solid devices, Caractéristique électrique, Electrical characteristic, Característica eléctrica, Condensateur couche mince, Thin film capacitor, Condensador capa fina, Couche mince semiconductrice, Semiconductor thin films, Couche mince, Thin film, Capa fina, Couche oxyde, Oxide layer, Capa óxido, Courant fuite, Leakage current, Corriente escape, Dispositif couche mince, Thin film device, Dispositivo capa delgada, Diélectrique, Dielectric materials, Dieléctrico, Effet Poole Frenkel, Poole Frenkel effect, Efecto Poole Frenkel, Effet température, Temperature effect, Efecto temperatura, Ferroélectrique, Ferroelectric materials, Material ferroeléctrico, Mémoire ferroélectrique, Ferroelectric storage, Propriété ferroélectrique, Ferroelectric properties, Propiedad ferroeléctrica, Recuit, Annealing, Recocido, Température recuit, Annealing temperature, Temperatura recocido, Structure MFIS, MFIS structure, Estructura MFIS, conduction mechanism, ferroelectric memory, memory window, zirconium oxide
Document Type:
Konferenz
Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Department of Electrical Engineering and Institute of Electronic Engineering, Tsing-Hua University, Hsinchu 300, Tawain, Province of China
Department of Materials Engineering, Mingchi University of Technology, Taipei 243, Tawain, Province of China
Department of Materials Engineering, Mingchi University of Technology, Taipei 243, Tawain, Province of China
ISSN:
0167-9317
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Accession Number:
edscal.18853499
Database:
PASCAL Archive
Weitere Informationen
Metal-ferroelectric-insulator-semiconductor (MFIS) thin-film structures using PbZr0.53Ti0.47O3(PZT) as the ferroelectric layer and zirconium oxide (ZrO2) as the insulator layer were fabricated in this work. The leakage current and the C-V memory window were measured for MFIS capacitors with the PZT layer annealed at temperatures of 400°C, 500°C, 600°C, 700°C. The dominant conduction mechanism of Al/PZT(290 nm)/ZrO2(15 nm)/Si structure is Poole-Frenkel emission in the temperature range of 300-425 K. Under a sweep voltage of 6 V, the largest memory window of 1.31 V was obtained for 500°C-annealed samples. The memory window as a function of insulator thickness was also discussed. More serious charge injection is observed when the voltage was swept from negative to positive.