JUAN, P. C., JIANG, J. D., SHIH, W. C., & LEE, J. Y. M. (2007, Januar 1). The effect of annealing temperature on the electrical properties of metal-ferroelectric (Pb Zr0.53 Ti0.47 O3 ) -insulator (Zr O2)-semiconductor (MFIS) thin-film capacitors. 84(9-10). Amsterdam: Elsevier Science, 2007. Abgerufen von http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=18853499
ISO-690 (author-date, English)JUAN, P. C, JIANG, J. D, SHIH, W. C und LEE, J. Y. M, 2007. The effect of annealing temperature on the electrical properties of metal-ferroelectric (Pb Zr0.53 Ti0.47 O3 ) -insulator (Zr O2)-semiconductor (MFIS) thin-film capacitors. In: [online]. Amsterdam: Elsevier Science, 2007. 1 Januar 2007. Available from: http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=18853499
Modern Language Association 9th editionJUAN, P. C., J. D. JIANG, W. C. SHIH, und J. Y. M. LEE. The effect of annealing temperature on the electrical properties of metal-ferroelectric (Pb Zr0.53 Ti0.47 O3 ) -insulator (Zr O2)-semiconductor (MFIS) thin-film capacitors. Nr. 9-10, Amsterdam: Elsevier Science, 2007., 2007, http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=18853499.
Mohr Siebeck - Recht (Deutsch - Österreich)Emerald - Harvard
JUAN, P.C., JIANG, J.D., SHIH, W.C. und LEE, J.Y.M. (2007), „The effect of annealing temperature on the electrical properties of metal-ferroelectric (Pb Zr0.53 Ti0.47 O3 ) -insulator (Zr O2)-semiconductor (MFIS) thin-film capacitors“, in , Bd. 84, Amsterdam: Elsevier Science, 2007., verfügbar unter: http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=18853499.