Result: Oxide interface studies using second harmonic generation
Title:
Oxide interface studies using second harmonic generation
Authors:
Source:
INFOS 2007: Proceedings of the 15th Biennial Conference on Insulating Films on Semiconductors, June 20-23, 2007, Glyfada Athens, GreeceMicroelectronic engineering. 84(9-10):2089-2092
Publisher Information:
Amsterdam: Elsevier Science, 2007.
Publication Year:
2007
Physical Description:
print, 8 ref
Original Material:
INIST-CNRS
Subject Terms:
Electronics, Electronique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Interfaces, Circuits intégrés, Integrated circuits, Conception. Technologies. Analyse fonctionnement. Essais, Design. Technologies. Operation analysis. Testing, Circuit intégré, Integrated circuit, Circuito integrado, Commande processus, Process control, Control proceso, Contact isolant semiconducteur, Semiconductor insulator contact, Contacto aislante semiconductor, Couche mince, Thin film, Capa fina, Diffusion information, Information dissemination, Difusión información, Défaut surface, Surface defect, Defecto superficie, Déformation superficielle, Surface deformation, Deformación superficial, Génération harmonique 2, Second harmonic generation, Méthode mesure, Measurement method, Método medida, Pastille électronique, Wafer, Pastilla electrónica, Rugosité, Roughness, Rugosidad, Technologie SIMOX, SIMOX technology, Tecnología SIMOX, Technologie silicium sur isolant, Silicon on insulator technology, Tecnología silicio sobre aislante, contamination, interface, metrology, non-destructive, roughness, second harmonic generation
Document Type:
Conference
Conference Paper
File Description:
text
Language:
English
Author Affiliations:
Department of Physics and Astronomy, Vanderbilt University, Nashville, TN, United States
Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN, United States
Ibis Technology Corp, Danvers, MA, United States
MEMC Electronic Materials, St. Peters, MO, United States
Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN, United States
Ibis Technology Corp, Danvers, MA, United States
MEMC Electronic Materials, St. Peters, MO, United States
ISSN:
0167-9317
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Accession Number:
edscal.18853516
Database:
PASCAL Archive
Further Information
We report experiments using a non-invasive second harmonic generation (SHG) technique to characterize buried Si/SiO2 interfaces and also SIMOX thin film silicon-on-insulator (SOI) wafers. The measurements demonstrate that the SHG response can provide an indication of the quality of the buried oxide interfaces, by providing information on surface roughness, strain, defects, and metallic contamination. The potential application of SHG for comprehensive buried interface characterization and as a non-contact metrology tool for process control is described.