Copyright 2007 INIST-CNRS CC BY 4.0 Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electrical engineering. Electroenergetics
Electronics
Accession Number:
edscal.19010235
Database:
PASCAL Archive
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We designed the single-flux-quantum (SFQ) circuits that were fabricating using the NEC 2.5 kA/cm2 standard process that has four Nb layers. Before designing circuits with two ground planes, we estimated sheet inductances of the base and counter planes using simple rectangular-shape inductors. Estimated sheet inductance of the base plane was 0.75 of the original value for the circuits with only under-ground plane. For the counter plane, sheet inductance was estimated to be 0.55 of the original value. We designed a 2-branch D-FF gate and fabricated SFQ circuits including the 2-branch D-FF using the NEC standard process. Parasitic inductances of the counter layer in the 2-branch D-FF were effectively minimized using two ground planes and frequency dependences of the lower bias margin were improved.