Result: Thickness dependence of ti buffer layers for fabricating As-grown MgB2 films

Title:
Thickness dependence of ti buffer layers for fabricating As-grown MgB2 films
Authors:
HARADA, Yoshitomo, YAMAGUCHI, Hirotaka, TAKAHASHI, Terukazu, IRIUDA, Hiroki, OBA, Tatsunori, YOSHIZAWA, Masahito
Source:
The 2006 applied superconductivity conference, Seattle, WA, August 27-September 1, 2006. Part III of three partsIEEE transactions on applied superconductivity. 17(2):2883-2886
Publisher Information:
New York, NY: Institute of Electrical and Electronics Engineers, 2007.
Publication Year:
2007
Physical Description:
print, 15 ref 3
Original Material:
INIST-CNRS
Subject Terms:
Electronics, Electronique, Electrical engineering, Electrotechnique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Dispositifs supraconducteurs, Superconducting devices, Fabrication microélectronique (technologie des matériaux et des surfaces), Microelectronic fabrication (materials and surfaces technology), Bicouche, Bilayers, Couche tampon, Buffer layer, Capa tampón, Diagramme rotation, Rocking curve, Diagrama rotación, Diffraction RX, X ray diffraction, Difracción RX, Epaisseur couche, Layer thickness, Espesor capa, Epitaxie jet moléculaire, Molecular beam epitaxy, Essai en place, In situ test, Ensayo en sitio, Fabrication microélectronique, Microelectronic fabrication, Fabricación microeléctrica, In situ, Magnétomètre SQUID, SQUID magnetometers, Matériau cristallin, Crystalline material, Material cristalino, Mesure magnétique, Magnetic measurement, Medida magnética, RHEED, Supraconducteur haute température, High temperature superconductor, Supraconductor alta temperatura, Température transition supraconductrice, Superconducting transition temperature, As-grown MgB2 film, epitaxial buffer layer,
Document Type:
Conference Conference Paper
File Description:
text
Language:
English
Author Affiliations:
JST satellite Iwate, Japan Science and Technology Agency, Morioka, Iwate 020-0852, Japan
National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan
Iwate Uni-University, Morioka, Iwate 020-8551, Japan
ISSN:
1051-8223
Access URL:
http://pascal-francis.inist.fr/vibad/index.php?action=search&terms=19016902
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electronics
Accession Number:
edscal.19016902
Database:
PASCAL Archive

Further Information

In this study, we have investigated the effects of Ti buffer layer for the fabrication of MgB2 crystalline film on ZnO (0001) substrate. The Ti buffer layers (thickness of 5-50 nm) and MgB2 films were deposited by molecular beam epitaxy apparatus. The MgB2/Ti bilayers were characterized by in-situ RHEED and ex-situ XRD measurements, and the superconducting properties were studied by magnetic measurements using SQUID magnetometer. It is found that Ti layers were grown epitaxially on the substrates and the MgB2 films were c-axis oriented with two types of in-plane rotational domains. The crystallinity reflected on the rocking curve width and the superconducting transition temperature Tc were enhanced with increasing the thickness of Ti buffer layer. The highest Tc in this study was obtained to be 37 K when the Ti buffer layer thickness is 50 nm.