Treffer: Thermally assisted transition in thin film based FCL : A way to speed up the normal transition across the wafer

Title:
Thermally assisted transition in thin film based FCL : A way to speed up the normal transition across the wafer
Source:
The 2006 applied superconductivity conference, Seattle, WA, August 27-September 1, 2006. Part III of three partsIEEE transactions on applied superconductivity. 17(2):3463-3466
Publisher Information:
New York, NY: Institute of Electrical and Electronics Engineers, 2007.
Publication Year:
2007
Physical Description:
print, 13 ref 3
Original Material:
INIST-CNRS
Subject Terms:
Electronics, Electronique, Electrical engineering, Electrotechnique, Sciences exactes et technologie, Exact sciences and technology, Sciences appliquees, Applied sciences, Electronique, Electronics, Electronique des semiconducteurs. Microélectronique. Optoélectronique. Dispositifs à l'état solide, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Dispositifs diélectriques et dispositifs à base de verre et de solides amorphes, Dielectric, amorphous and glass solid devices, Dispositifs supraconducteurs, Superconducting devices, Electrotechnique. Electroenergetique, Electrical engineering. Electrical power engineering, Appareillage de connexion et de protection, Connection and protection apparatus, Matériel électrique divers, Various equipment and components, Condensateurs. Résistances. Filtres, Capacitors. Resistors. Filters, Basse tension, Low voltage, Baja tensión, Chauffage, Heating, Calefacción, Commutation, Switching, Conmutación, Condensateur puissance, Power capacitor, Condensador potencia, Couche mince, Thin film, Capa fina, Couche supraconductrice, Superconducting films, Court circuit, Short circuit, Cortocircuito, Dispositif protection, Protective device, Dispositivo protección, Dispositif supraconducteur, Superconductor device, Dispositivo supraconductor, Dissipation énergie, Energy dissipation, Disipación energía, Limiteur courant défaut, Fault current limiters, Pastille électronique, Wafer, Pastilla electrónica, Prévention dommage, Damage prevention, Prevención daño, Résistance thermique contact, Contact thermal resistance, Resistencia térmica contacto, Supraconducteur haute température, High temperature superconductor, Supraconductor alta temperatura, Surface arrière, Back surface, Superficie atrás, high temperature superconductors, superconducting devices, superconducting films
Document Type:
Konferenz Conference Paper
File Description:
text
Language:
English
Author Affiliations:
University of Geneva, DPMC, 24 Quai Ernest Ansermet, 1211 Geneva, Switzerland
ABB Corporate Research Center in Switzerland, 5405 Baden-Dättwil, Switzerland
Swiss Federal Institute of Technology, EPFL-IC-LANOS, 1015 Lausanne, Switzerland
ISSN:
1051-8223
Rights:
Copyright 2007 INIST-CNRS
CC BY 4.0
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Notes:
Electrical engineering. Electroenergetics

Electronics
Accession Number:
edscal.19017050
Database:
PASCAL Archive

Weitere Informationen

The adjunction of constrictions along the meander of a superconducting Fault Current Limiter (FCL) greatly improves its behavior thanks to a better distribution of the dissipative zones at the occurrence of a short circuit. This design works perfectly for symmetrical short circuit (i.e. short circuit at the maximum voltage). However for asymmetrical short circuits (at voltages close to 0), we are facing a problem due to the small number of the initially switched constrictions. To solve this problem, we test the possibility to speed up the transition into the normal state of the whole meander by heating it locally. This thermally assisted transition is realized by growing a gold layer on the backside of the substrate and by patterning it into a meander with its dissipative parts lying just underneath the constrictions of the FCL. This gold meander can be either connected in parallel with the superconducting meander or a capacitor bank can supply the current. In order to confirm the benefit of the thermally assisted transition we have carefully measured the behavior of the FCL during constant current and low voltage pulses as a function of the power injected into the gold line. We present results showing that the response of the FCL to the generated heat is very fast; typically less than 100 μs. Furthermore the distribution of the dissipated power across the wafer, during asymmetrical AC short circuit, is clearly improved.