ANTOGNAZZA, L., DECROUX, M., THERASSE, M., ABPLANALP, M., DURON, J., DUTOIT, B., & FISCHER, O. (2007, January 1). Thermally assisted transition in thin film based FCL : A way to speed up the normal transition across the wafer. 17(2). New York, NY: Institute of Electrical and Electronics Engineers, 2007. Retrieved from http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=19017050
ISO-690 (author-date, English)ANTOGNAZZA, L, DECROUX, M, THERASSE, M, ABPLANALP, M, DURON, J, DUTOIT, B and FISCHER, O, 2007. Thermally assisted transition in thin film based FCL : A way to speed up the normal transition across the wafer. In: [online]. New York, NY: Institute of Electrical and Electronics Engineers, 2007. 1 January 2007. Available from: http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=19017050
Modern Language Association 9th editionANTOGNAZZA, L., M. DECROUX, M. THERASSE, M. ABPLANALP, J. DURON, B. DUTOIT, and O. FISCHER. Thermally assisted transition in thin film based FCL : A way to speed up the normal transition across the wafer. no. 2, New York, NY: Institute of Electrical and Electronics Engineers, 2007., 2007, http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=19017050.
Mohr Siebeck - Recht (Deutsch - Österreich)Emerald - Harvard
ANTOGNAZZA, L., DECROUX, M., THERASSE, M., ABPLANALP, M., DURON, J., DUTOIT, B. and FISCHER, O. (2007), “Thermally assisted transition in thin film based FCL : A way to speed up the normal transition across the wafer”, in , Vol. 17, New York, NY: Institute of Electrical and Electronics Engineers, 2007., available at: http://pascal-francis.inist.fr/vibad ndex.php?action=search&terms=19017050.